NTE2388
MOSFET
NChannel Enhancement Mode,
High Speed Switch
Description:
The NTE2388 is an NChannel Enhancement Mode Power MOS Field Effect Transistor in a TO220
type package designed for low voltage, high speed power switching applications such as switching
regulators, converters, solenoid, and relay drivers.
Features:
D
Silicon Gate for Fast Switching Speeds
D
Low r
DS(on)
to Minimize OnLosses. Specified at Elevated Temperatures.
D
Rugged SOA is Power Dissipation Limited
D
SourcetoDrain Diode Characterized for Use With Inductive Loads
Absolute Maximum Ratings:
DrainSource Voltage, V
DSS
200V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DrainGate Voltage (R
GS
= 20k
), V
DGR
200V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GateSource Voltage, V
GS
20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain Current, I
D
Continuous
T
C
= +25
C
18A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +100
C
11A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
T
C
= +25
C
72A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
C), P
D
125W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
1W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Operating Junction Temperature Range, T
J
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, JunctiontoCase, R
thJC
1
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, JunctiontoAmbient, R
thJA
62.5
C/W
. . . . . . . . . . . . . . . . . . . . . . . .
Maximum Lead Temperature (During soldering, 1/8" from case for 5sec), T
L
+300
C
. . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
DrainSource Breakdown Voltage
V
(BR)DSS
I
D
= 250
A, V
GS
= 0
200
V
ZeroGate Voltage Drain Current
I
DSS
V
GS
= 0, V
DS
= Max Rating
200
A
V
GS
= 0, V
DS
= 160V,
T
C
= +125
C
1000
A
GateBody Leakage Current, Forward
I
GSSF
V
DS
= 0, V
GSF
= 20V
100
nA
GateBody Leakage Current, Reverse
I
GSSR
V
DS
= 0, V
GSR
= 20V
100
nA
ON Characteristics (Note 1)
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
2
4
V
Static DrainSource On Resistance
R
DS(on)
V
GS
= 10V, I
D
= 10A
0.18
OnState Drain Current
I
D(on)
V
GS
= 10V, V
DS
3.2V
18
A
Forward Transconductance
g
fs
V
DS
3.2V, I
D
= 10A
6
mhos
Dynamic Characteristics
Input Capactiance
C
iss
V
DS
= 25V, V
GS
= 0,
1600
pf
Output Capacitance
C
oss
f = 1MHz
750
pf
Reverse Transfer Capactiance
C
rss
300
pf
Switching Characteristics (Note 1)
TurnOn Time
t
d(on)
V
DD
[
75V, I
D
= 10A
PEAK
,
30
ns
Rise Time
t
r
R
g
= 4.7
60
ns
TurnOff Delay Time
t
d(off)
80
ns
Fall Time
t
f
60
ns
Total Gate Charge
Q
g
V
DS
= 160V, V
GS
= 10V,
38
60
nC
GateSource Charge
Q
gs
I
D
= Rated I
D
16
nC
GateDrain Charge
Q
gd
22
nC
Source Drain Diode Characteristics (Note 1)
Forward ON Voltage
V
SD
I
S
= Rated I
D
, V
GS
= 0
1.8
2.0
V
Forward TurnOn Time
t
on
Limited by stray inductance
Reverse Recovery Time
t
rr
450
ns
Internal Package Inductance
Internal Drain Inductance
L
d
Measured from the contact
screw on tab to center of die
3.5
nH
Measured from the drain lead
0.25" from package to center
of die
4.5
nH
Internal Source Inductance
L
s
Measured from the source
lead 0.25" from package to
source bond pad
7.5
nH
Note 1. Pulse test: Pulse width
300
s, Duty cycle
2%.
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