NTE2393
MOSFET
NChannel Enhancement Mode,
High Speed Switch
Description:
The NTE2393 is an NChannel Enhancement Mode Power MOS Field Effect Transistor. Easy drive
and very fast switching times make this device ideal for high speed switching applications. Typical
applications include switching mode power supplies, uninterruptible power supplies, and motor
speed control.
Features:
D
High Voltage: 500V for OffLine SMPS
D
High Current: 9A for up to 350W SMPS
D
Ultra Fast Switching for Operation at less than 100kHz
Industrial Applications:
D
Switching Mode Power Supplies
D
Motor Controls
Absolute Maximum Ratings:
DrainSource Voltage (V
GS
= 0), V
DS
500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DrainGate Voltage (R
GS
= 20k
), V
DGR
500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GateSource Voltage, V
GS
20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Drain Current, I
D
T
C
= +25
C
9A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +100
C
5.6A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed Drain Current (Note 1), I
DM
36A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Clamped Drain Inductive Current (Note 1), I
DLM
36A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Dissipation (T
C
= +25
C), P
tot
150W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
1.2W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, JunctiontoCase, R
thJC
0.83
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Lead Temperature (During Soldering), T
L
+275
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulse width limited by safe operating area.
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
DrainSource Breakdown Voltage
V
(BR)DSS
I
D
= 250
A, V
GS
= 0
500
V
ZeroGate Voltage Drain Current
I
DSS
V
GS
= 0, V
DS
= Max Rating
250
A
V
GS
= 0, V
DS
= 400V,
T
C
= +125
C
1000
A
GateBody Leakage Current
I
GSS
V
DS
= 0, V
GS
=
20V
100
nA
ON Characteristics (Note 2)
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
2
4
V
Static DrainSource On Resistance
R
DS(on)
V
GS
= 10V, I
D
= 4.5A
0.7
V
GS
= 10V, I
D
= 4.5A,
T
C
= 100
C
1.4
Dynamic Characteristics
Forward Transconductance
g
fs
V
DS
= 25V, I
D
= 4.5A
5
mho
Input Capactiance
C
iss
V
DS
= 25V, V
GS
= 0,
1600 1900
pf
Output Capacitance
C
oss
f = 1MHz
280
pf
Reverse Transfer Capactiance
C
rss
170
pf
Switching Characteristics
TurnOn Time
t
d(on)
V
DD
= 250V, I
D
= 4.5A,
30
40
ns
Rise Time
t
r
R
I
= 4.7
,
V
I
= 10V
40
60
ns
TurnOff Delay Time
t
d(off)
130
170
ns
Fall Time
t
f
30
40
ns
Source Drain Diode Characteristics
SourceDrain Current
I
SD
9
A
SourceDrain Current (Pulsed)
I
SDM
Note 2
36
A
Forward ON Voltage
V
SD
I
SD
= 9A, V
GS
= 0
1.15
V
Reverse Recovery Time
t
rr
I
DS
= 9A, V
GS
= 0,
di/dt = 100A/
s
420
ns
Note 2. Pulse width limited by safe operating area.
Note 3. Pulsed: Pulse Duration = 300
s, Duty Cycle 1.5%
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