NTE2399
MOSFET
NCh, Enhancement Mode
High Speed Switch
Features:
D
Dynamic dv/dt Rating
D
Repetitive Avalanche Rated
D
Fast Switching
D
Ease of Paralleling
D
Simple Drive Requirements
Absolute Maximum Ratings:
Continuous Drain Current (V
GS
= 10V), I
D
T
C
= +25
C
3.1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +100
C
2.0A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed Drain Current (Note 1), I
DM
12A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (T
C
= +25
C), P
D
125W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Linearly Above 25
C
1.0W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GatetoSource Voltage, V
GS
20
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy (Note 2), E
AS
280mJ
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Avalanche Current (Note 1), I
AR
3.1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Avalanche Energy (Note 1), E
AR
13mJ
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Diode Recovery dv/dt (Note 3), dv/dt
1.0V/ns
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1.6mm from case for 10sec), T
L
+300
C
. . . . . . . . . . . . . . . . .
Mounting Torque (632 or M3 Screw)
10 lbf
in (1.1N
m)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
1.0
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient, R
thJA
62
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, CasetoSink (Flat, Greased Surface), R
thCS
0.5
C/W
. . . . . . . . . . . .
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 2. V
DD
= 50V, starting T
J
= +25
C, L = 55mH, R
G
= 25
, I
AS
= 3.1A
Note 3. I
SD
3.1A, di/dt
80A/
s, V
DD
600V, T
J
+150
C
Note 4. Pules Width
300
s, Duty Cycle
2%.
Electrical Characteristics: (T
J
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
DraintoSource Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 250
A
1000
V
Breakdown Voltage Temp. Coefficient
V
(BR)DSS
T
J
Reference to +25
C, I
D
= 1mA
1.4
V/
C
Static DraintoSource OnResistance
R
DS(on)
V
GS
= 10V, I
D
= 1.9A, Note 4
0.50
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
2.0
4.0
V
Forward Transconductance
g
fs
V
DS
= 100V, I
D
= 1.9A, Note4
2.1
mhos
DraintoSource Leakage Current
I
DSS
V
DS
= 1000V, V
GS
= 0V
100
A
V
DS
= 800V, V
GS
= 0V, T
J
= +125
C
500
A
GatetoSource Forward Leakage
I
GSS
V
GS
= 20V
100
nA
GatetoSource Reverse Leakage
I
GSS
V
GS
= 20V
100
nA
Total Gate Charge
Q
g
I
D
= 3.1A, V
DS
= 400V, V
GS
= 10V,
80
nC
GatetoSource Charge
Q
gs
Note 4
10
nC
GatetoDrain ("Miller") Charge
Q
gd
42
nC
TurnOn Delay Time
t
d(on)
V
DD
= 500V, I
D
= 3.1A, R
G
= 12
,
12
ns
Rise Time
t
r
R
D
= 170
, Note 4
25
ns
TurnOff Delay Time
t
d(off)
89
ns
Fall Time
t
f
29
ns
Internal Drain Inductance
L
D
Between lead, .250in. (6.0) mm from
4.5
nH
Internal Source Inductance
L
S
package and center of die contact
7.5
nH
Input Capacitance
C
iss
V
GS
= 0V, V
DS
= 25V, f = 1MHz
980
pF
Output Capacitance
C
oss
140
pF
Reverse Transfer Capaticance
C
rss
50
pF
SourceDrain Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Continuous Source Current (Body Diode)
I
S
3.1
A
Pulsed Source Current (Body Diode)
I
SM
Note 1
12
A
Diode Forward Voltage
V
SD
T
J
= +25
C, I
S
= 3.1A, V
GS
= 0V,
Note 4
1.8
V
Reverse Recovery Time
t
rr
T
J
= +25
C, I
F
= 3.1A,
410
620
ns
Reverse Recovery Charge
Q
rr
di/dt = 100A/
s, Note 4
1.3
2.0
C
Forward TurnOn Time
t
on
Intrinsic turnon time is neglegible (turnon is dominated by L
S
+L
D
)
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 4. Pulse width
300
s; duty cycle
2%.
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