NTE238
Silicon NPN Transistor
Color TV, Horizontal Output
Description:
The NTE238 is a silicon NPN horizontal deflection transistor in a TO3 type package designed for use
in deflection circuits.
Features:
D
V
CEX
= 1500V
D
Safe Operating Area @ 50
s = 20A, 400V
Absolute Maximum Ratings;
CollectorEmitter Voltage, V
CEX
1500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EB
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector CurrentContinuous, I
C
8A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base CurrentContinuous, I
B
4A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter CurrentContinuous, I
E
12A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
C), P
D
100W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above 25
C
0.8W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
1.25
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Lead Temperature (Soldering Purposes, 1/8" from case for 5sec), T
L
+275
C
. . . . . . . . .
Electrical Characteristics: (T
C
=+25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Sustaining Voltage
V
CEO(sus)
V
C
= 50mA, I
B
= 0
750
V
Collector Cutoff Current
I
CES
V
CE
= 1500V, V
BE
= 0
0.25
mA
Emitter Cutoff Current
I
EBO
V
BE
= 5V, I
C
= 0
0.1
mA
ON Characteristics (Note 1)
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 5A, I
B
= 1A
5.0
V
Base Emitter Saturation Voltage
V
BE(sat)
I
C
= 5A, I
B
= 1A
1.5
V
SWITCHING CHARACTERISTICS
Fall Time
t
f
I
C
= 5A, I
B1
= 1A, L
B
= 8
H
0.4
1.0
s
Note 1. Pulse test: Pulse Width
300
s, Duty Cycle = 2%.
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