NTE2409
Silicon PNP Transistor
General Purpose Amp, Surface Mount
(Compl to NTE2408)
Description:
The NTE2409 is a silicon PNP general purpose transistor in a SOT23 type surface mount package
designed for use in driver stages of audio amplifiers in thick and thinfilm hybrid circuits.
Absolute Maximum Ratings:
CollectorBase Voltage, V
CBO
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEX
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
65V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
100mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
200mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Emitter Current, I
EM
200mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Base Current, I
BM
200mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
= +60
C, Note 1), P
tot
200mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoTab, R
thJT
60K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, TabtoSoldering Points, R
thTS
280K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Soldering PointstoAmbient (Note 1), R
thSA
90K/W
. . . . . . . . . . . . . . . . . . . .
Note 1. Mounted on a ceramic substrate .314 (8mm) x .393 (10mm) x .027 (0.7mm).
Electrical Characteristics: (T
J
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 30V, I
E
= 0
1
15
nA
V
CB
= 30V, I
E
= 0, T
J
= +150
C
4
A
BaseEmitter Voltage
V
BE
V
CE
= 5V, I
C
= 2mA, Note 2
600
650
750
mV
V
CE
= 5V, I
C
= 10mA, Note 2
820
mV
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 10mA, I
B
= 0.5mA, Note 3
75
300
mV
I
C
= 100mA, I
B
= 5mA, Note 3
250
650
mV
Note 2. V
BE
decreases by about 2mV/K with increasing temperature.
Note 3. V
BE(sat)
decreases by about 1.7mV with increasing temperature.
PDF 
ZIP