NTE2413
Silicon PNP Transistor
General Purpose, High Voltage Amp,
(Compl to NTE2412)
Description:
The NTE2413 is a silicon PNP transistor in an SOT23 type surface mount package designed for use
primarily in telephone and professional communication equipment.
Absolute Maximum Ratings:
CollectorBase Voltage, V
CBO
300V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage (R
BE
= 2.7k
), V
CER
300V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
50mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
100mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
+35
C, Note 1), P
tot
310mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoTab, R
thJT
50K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, TabtoSoldering Points, R
thTS
260K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Soldering PointstoAmbient (Note 1), R
thSA
60K/W
. . . . . . . . . . . . . . . . . . . .
Note 1. Mounted on a ceramic substrate 2.5cm
2
x 0.7mm.
Electrical Characteristics: (T
J
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 200V, I
E
= 0
10
nA
I
CER
V
CE
= 250V, R
BE
= 2.7k
50
nA
V
CE
= 200V, R
BE
= 2.7k
,
T
J
= +150
C
10
A
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 30mA, I
B
= 5mA
0.8
V
DC Current Gain
h
FE
V
CE
= 20V, I
C
= 25mA
50
Transition Frequency
f
T
V
CE
= 10V, I
E
= 10mA,
f = 35MHz
60
MHz
Capacitance
C
re
V
CE
= 30V, I
C
= 0, f = 1MHz
1.6
pF
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