NTE243 (NPN) & NTE244 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE243 (NPN) and NTE244 (PNP) are silicon complementary Darlington transistors in a TO3
type case designed for generalpurpose amplifier and lowfrequency switching applications.
Features:
D
High DC Current Gain: h
FE
= 3000 Typ @ I
C
= 4A
D
CollectorEmitter Sustaining Voltage: V
CEO(sus)
= 80V Min @ 100mA
D
Low CollectorEmitter Saturation Voltage:
V
CE(sat)
= 2V Max @ I
C
= 4A
= 3V Max @ I
C
= 8A
D
Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CB
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EB
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
8A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
16A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
120mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
C), P
D
100W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
0.571W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
1.78
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter SustainingVoltage
V
CEO(sus)
I
C
= 100mA, I
B
= 0, Note 1
80
V
Collector Cutoff Current
I
CEO
V
CE
= 40V, I
E
= 0
0.5
mA
I
CEX
V
CE
= 80V, V
BE(off)
= 1.5V
0.5
mA
V
CE
= 80V, V
BE(off)
= 1.5V, T
A
= +150
C
5.0
mA
Emitter Cutoff Current
I
EBO
V
BE
= 5V, I
C
= 0
2.0
mA
Note 1. Pulse Test: Pulse Width = 300
s, Duty Cycle = 2%
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics (Note 1)
DC Current Gain
h
FE
V
CE
= 3V, I
C
= 4A
750
18000
V
CE
= 3V, I
C
= 8A
100
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 4A, I
B
= 16mA
2.0
V
I
C
= 8A, I
B
= 80mA
3.0
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 8A, I
B
= 80mA
4.0
V
BaseEmitter ON Voltage
V
BE(on)
V
CE
= 3V, I
C
= 4A
2.8
V
Dynamic Characteristics
SmallSignal Current Gain
h
fe
V
CE
= 3V, I
C
= 3A, f = 1kHz
300
Magnitude of Common Emitter
SmallSignal ShortCircuit
Forward Current Transfer Ratio
|h
fe
|
V
CE
= 3V, I
C
= 3A, f = 1MHz
4.0
MHz
Output Capacitance
NTE243
C
ob
V
CB
= 10V, I
E
= 0, f = 0.1MHz
200
pF
NTE244
300
pF
Note 1. Pulse Test: Pulse Width = 300
s, Duty Cycle = 2%
NTE243
NTE244
B
C
E
B
C
E
1.187 (30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02)
.312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/Case
Base
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
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