NTE2503
Silicon NPN Transistor
High Gain Switch
Features:
D
High DC Current Gain
D
High Current Capacity
D
Low CollectorEmitter Saturation Voltage
D
High EmitterBase Voltage
Applications:
D
AF Amplifier
D
Various Driver
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectorEmitter Voltage, V
CEO
25V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CBO
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
15V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
700mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse
1.5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
600mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 20V, I
E
= 0
0.1
A
Emitter Cutoff Current
I
EBO
V
EB
= 10V, I
C
= 0
0.1
A
DC Current Gain
h
FE
I
C
= 50mA, V
CE
= 5V
800
1500 3200
I
C
= 500mA, V
CE
= 5V
600
Current GainBandwidth Product
f
T
I
C
= 50mA, V
CE
= 10V
270
MHz
Output Capacitance
C
ob
V
CB
= 10V, f = 1MHz
9
pF
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Saturation Voltage
V
CE(sat)
I
C
= 500mA, I
B
= 10mA
0.15
0.50
V
Base Saturation Voltage
V
BE(sat)
I
C
= 500mA, I
B
= 10mA
0.9
1.2
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 10
A, I
E
= 0
30
V
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 1mA, R
BE
=
25
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 10
A, I
C
= 0
15
V
TurnOn Time
t
on
I
B1
= 100mA,
0.1
s
Storage Time
t
stg
I
B2
= I
C
= 300mA,
Pulse Width = 20
s,
0.6
s
Fall Time
t
f
Pulse Width = 20
s,
Duty Cycle
1%
0.06
s
.021 (.445) Dia Max
E C B
Seating Plane
.135 (3.45) Min
.100 (2.54)
.050 (1.27)
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max
.210
(5.33)
Max
.500
(12.7)
Min
.165
(4.2)
Max
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