NTE2505
Silicon NPN Transistor
Low Frequency, General Purpose Amp
Features:
D
High Current Capacity
D
High DC Current Gain
D
Low Collector Emitter Saturation Voltage
D
High Emitter Base Breakdown Voltage
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
25V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
15V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
4A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
400mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
1W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 20V, I
E
= 0
100
nA
Emitter Cutoff Current
I
EBO
V
EB
= 10V, I
C
= 0
100
nA
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 500mA
800
1500 3200
V
CE
= 5V, I
C
= 1A
600
GainBandwidth Product
f
T
V
CE
= 10V, I
C
= 50mA
260
MHz
Output Capacitance
C
ob
V
CB
= 10V, f = 1MHz
27
pF
Collector Emitter Saturation Voltage
V
CE(sat)
I
C
= 1A, I
B
= 20mA
0.15
0.5
V
Base Emitter Saturation Voltage
V
BE(sat)
I
C
= 1A, I
B
= 20mA
0.85
1.2
V
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Base Breakdown Voltage
V
(BR)CBO
I
C
= 10
A, I
E
= 0
30
V
Collector Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 1mA, R
BE
=
25
V
Emitter Base Breakdown Voltage
V
(BR)EBO
I
E
= 10
A, I
C
= 0
15
V
TurnOn Time
t
on
V
CC
= 10V, V
BE
= 5V,
0.14
s
Storage Time
t
stg
100I
B1
= 100I
B2
= I
C
= 700mA,
Pulse Width = 20
s,
1.35
s
Fall Time
t
f
Pulse Width = 20
s,
Duty Cycle
1%
0.1
s
.039 (1.0)
.039 (1.0)
.137
(3.5)
.122
(3.1)
.177
(4.5)
.161
(4.1)
.271 (6.9)
.098
(2.5)
.098 (2.5)
B
C
E
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