NTE2508 (NPN) & NTE2509 (PNP)
Silicon Complementary Transistors
Video Output for HDTV
Features:
D
High Gain Bandwidth Product: f
T
= 500MHz
D
High Breakdown Voltage: V
CEO
= 120V Min
D
Low Reverse Transfer Capacitance and Excellent HF Response
Applications:
D
HighDefinition CRT Display Video Output
D
WideBand Amp
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
Collector to Base Voltage, V
CBO
120V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector to Emitter Voltage, V
CEO
120V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter to Base Voltage, V
EBO
3V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
300mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
600mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
T
A
= +25
C
1.3W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +25
C
8W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 80V, I
E
= 0
0.1
A
Emitter Cutoff Current
I
EBO
V
EB
= 2V, I
C
= 0
0.1
A
DC Current Gain
h
FE
V
CE
= 10V, I
C
= 50mA
40
320
V
CE
= 10V, I
C
= 200mA
20
Gain Bandwidth Product
f
T
V
CE
= 10V, I
C
= 50mA
400
MHz
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Output Capacitance
NTE2508
C
ob
V
CB
= 30V, f = 1MHz
3.1
pF
NTE2509
4.4
pF
Reverse Transfer Capacitance
NTE2508
C
re
V
CB
= 30V, f = 1MHz
2.7
pF
NTE2509
4.0
pF
Collector to Emitter Saturation Voltage
V
CE(sat)
I
C
= 50mA, I
B
= 5mA
1.0
V
Base to Emitter Saturation Voltage
V
BE(sat)
I
C
= 50mA, I
B
= 5mA
1.0
V
E
C
B
.315 (8.0)
.130
(3.3)
.295
(7.5)
.433
(11.0)
.610
(15.5)
.118 (3.0)
Dia
.094 (2.4)
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