NTE2526 (NPN) & NTE2527 (PNP)
Silicon Complementary Transistors
High Current Switch
Features:
D
Low CollectorEmitter Saturation Voltage
D
High Current and High f
T
D
Excellent Linearity of h
FE
D
Fast Switching Time
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
Collector Base Voltage, V
CBO
120V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Emitter Voltage, V
CEO
100V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Base Voltage, V
EBO
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
4A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse
8A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
T
A
= +25
C
1W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +25
C
20W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Collector Cutoff Current
I
CBO
V
CB
= 100V, I
E
= 0
1.0
A
Emitter Cutoff Current
I
EBO
V
EB
= 4V, I
C
= 0
1.0
A
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 500mA
140
400
V
CE
= 5V, I
C
= 3A
40
GainBandwidth Product
NTE2526
f
T
V
CE
= 10V, I
C
= 500mA
180
MHz
NTE2527
130
MHz
Output Capacitance
NTE2527
C
ob
V
CB
= 10V, f = 1MHz
40
pF
NTE2526
65
pF
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
CollectorEmitter Saturation Voltage
NTE2526
V
CE(sat)
I
C
= 2A, I
B
= 200mA
150
400
mV
NTE2527
200
500
mV
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 2A, I
B
= 200mA
0.9
1.2
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 10
A, I
E
= 0
120
V
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 1mA, R
BE
=
100
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 10
A, I
C
= 0
6
V
TurnOn Time
t
on
V
CC
= 50V, V
BE
= 5V,
100
ns
Storage Time
NTE2526
t
stg
10I
B1
= 10I
B2
= I
C
=2A,
Pulse Width = 20
s,
Duty Cycle
1%, Note 1
900
ns
NTE2527
800
ns
Fall Time
t
f
50
ns
Note 1. For NTE2527, the polarity is reversed.
B
C
E
.197 (5.0)
.256 (6.5)
.090 (2.3)
.090 (2.3)
.059 (1.5)
.275
(7.0)
.295
(7.5)
.002 (0.5)
.002(0.5)
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