NTE253 (NPN) & NTE254 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126
type case designed for generalpurpose amplifier and lowspeed switching applications.
Features:
D
High DC Current Gain: h
FE
= 2000 (Typ) @ I
C
= 2A
D
Monolithic Construction with BuiltIn BaseEmitter Resistors to Limit Leakage Multiplication
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectorEmitter Voltage, V
CEO
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CB
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EB
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
4A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
100mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
C), P
D
40W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
0.32W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
3.23
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 50mA, I
B
= 0, Note 1
80
V
Collector Cutoff Current
I
CEO
V
CE
= 80V, I
B
= 0
100
A
I
CBO
V
CE
= 80V, I
E
= 0
100
A
V
CE
= 80V, I
E
= 0, T
C
= +100
C
500
A
Emitter Cutoff Current
I
EBO
V
BE
= 5V, I
C
= 0
2.0
mA
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics (Note 1)
DC Current Gain
NTE253
h
FE
V
CE
= 3V, I
C
= 1.5A
750
2000
NTE254
V
CE
= 3V, I
C
= 2A
750
2000
NTE253 & NTE253
V
CE
= 3V, I
C
= 4A
100
CollectorEmitter Saturation Voltage
NTE253
V
CE(sat)
I
C
= 1.5A, I
B
= 30mA
2.5
V
NTE254
I
C
= 2.0A, I
B
= 40mA
2.8
V
NTE253 & NTE254
I
C
= 4.0A, I
B
= 40mA
3.0
V
BaseEmitter ON Voltage
NTE253
V
BE(on)
V
CE
= 3V, I
C
= 1.5A
2.5
V
NTE254
V
CE
= 3V, I
C
= 2.0A
2.5
V
NTE253 & NTE254
V
CE
= 3V, I
C
= 4.0A
3.0
V
Dynamic Characteristics
SmallSignal Current Gain
|h
fe
|
V
CE
= 3V, I
C
= 1.5A, f = 1MHz
1.0
Note 1. Pulse Test: Pulse Width
300
s, Duty Cycle
2%
Note 2. NTE253MCP is a matched complementary pair containing 1 each of NTE253 (NPN) and
NTE254 (PNP).
NTE253
NTE254
B
C
E
B
C
E
.330 (8.38)
Max
.450
(11.4)
Max
.655
(16.6)
Max
.130 (3.3)
Max
.175
(4.45)
Max
.030 (.762) Dia
.090 (2.28)
.118 (3.0)
Dia
E
C
B
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