NTE2377
MOSFET
NChannel,
Enhancement Mode, High Speed
Description:
The NTE2377 is an NChannel Enhancement Mode Power MOS Field Effect Transistor. Easy drive
and very fast switching times make this device ideal for high speed switching applications. Typical
applications include switching mode power supplies, uninterruptible power supplies, and motor
speed control.
Features:
D
Low ONState Resistance
D
Very HighSpeed Switching
D
Converters
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
DrainSource Voltage, V
DSS
900V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GateSource Voltage, V
GSS
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Drain Current, I
D
8A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed Drain Current (Note 1), I
DP
36A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Allowable Power Dissipation (T
C
= +25
C), P
D
150W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Channel Temperature, T
ch
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulse Width
10
s, Duty Cycle
1%.
Note 2. Be careful in handling the NTE2377 because it has no protection diode between gate and
source.
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
DrainSource Breakdown Voltage
V
(BR)DSS
I
D
= 1mA, V
GS
= 0
900
V
ZeroGate Voltage Drain Current
I
DSS
V
GS
= 0, V
DS
= Max Rating
1.0
mA
GateSource Leakage Current
I
GSS
V
DS
= 0, V
GS
=
30V
100
nA
Cutoff Voltage
V
GS(off)
V
DS
= 10V, I
D
= 1mA
2
3
V
Static DrainSource On Resistance
R
DS(on)
V
GS
= 10V, I
D
= 4A
1.2
1.6
Forward Transconductance
g
fs
V
DS
= 20V, I
D
= 4A
2.5
5.0
mho
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