NTE2545 (NPN) & NTE2546 (PNP)
Silicon Complementary Transistors
Darlington, High Speed Driver
Features:
D
High Speed Switching
D
Wide ASO Range
D
High Gain Bandwidth Product
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
Collector Base Voltage, V
CBO
70V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Emitter Voltage, V
CEO
60V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Base Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
8A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
T
A
= +25
C
1.75W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +25
C
30W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 40V, I
E
= 0
0.1
mA
Emitter Cutoff Current
I
EBO
V
EB
= 5V, I
C
= 0
3.0
mA
DC Current Gain
h
FE
V
CE
= 2V, I
C
= 2.5A
2000 5000
GainBandwidth Product
f
T
V
CE
= 5V, I
C
= 2.5A
200
MHz
Collector Emitter Saturation Volt-
age
NTE2545
V
CE(sat)
I
C
= 2.5A, I
B
= 5mA
0.9
V
NTE2546
1.0
1.5
V
Base Emitter Saturation Voltage
V
BE(sat)
I
C
= 2.5A, I
B
= 5mA
2.0
V
Collector Base Breakdown Voltage
V
(BR)CBO
I
C
= 5mA, I
E
= 0
70
V
Collector Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 50mA, R
BE
=
60
V
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