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Электронный компонент: NTE2550

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NTE5491 thru NTE5496
Silicon Controlled Rectifier (SCR)
10 Amp
Description:
The NTE5491 through NTE5496 are silicon controlled rectifiers designied primarily for halfwave AC
control applications such as motor controls, heating controls, power supplies, or wherever halfwave
silicon gatecontrolled, solidstate devices are needed.
Features:
D
GlassPassivated Junctions and Center Gate Fire for Greater Parameter Uniformity and Stability
D
Blocking Voltage to 600 Volts
Absolute Maximum Ratings: (T
J
= +125
C unless otherwise specified)
Peak Repetitive OffState Blocking Voltage, V
RRM
, V
DRM
NTE5491
100V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5492
200V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5494
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5496
600V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak NonRepetitive Reverse Voltage, V
RSM
NTE5491
150V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5492
300V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5494
500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5496
720V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS OnState Current (All Conduction Angles), I
T(RMS)
25A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average OnState Current (T
C
= +65
C), I
T(AV)
16A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak NonRepetitive Surge Current, I
TSM
(One cycle, 60Hz, Preceeded and followed by rated Current and Voltage)
150A
. . . . . . . . . .
Circuit Fusing Considerations (T
J
= 40
to +125
C, t = 1 to 8.3ms), I
2
t
93A
2
s
. . . . . . . . . . . . . . . . .
Peak Gate Power Dissipation, P
GM
5W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate Power Dissipation, P
G(AV)
500mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Forward Gate Current, I
GT
NTE5491, NTE5492, NTE5494
2.0A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5496
1.2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, JunctiontoCase, R
thJC
2
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stud Torque
30 in.lb.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
J
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max
Unit
Average Forward Blocking Current
NTE5491
I
D(AV)
Rated V
DRM
, Gate Open
T
J
= +125
C
6.5
mA
NTE5492
6.0
mA
NTE5494
4.0
mA
NTE5496
2.5
mA
Average Reverse Blocking Current
NTE5491
I
R(AV)
Rated V
RRM
, Gate Open
T
J
= +125
C
6.5
mA
NTE5492
6.0
mA
NTE5494
4.0
mA
NTE5496
2.5
mA
Peak Forward Blocking Current
I
DRM
Rated V
DRM
, Gate Open
10
A
Peak Reverse Blocking Current
I
RRM
Rated V
RRM
, Gate Open,
T
J
= +125
C
20
mA
Peak OnState Voltage
V
TM
I
TM
= 50.3A Peak, Note 1
2
V
DC GateTrigger Current
I
GT
V
AK
= 12VDC, R
L
= 50
40
mA
DC GateTrigger Voltage
V
GT
V
AK
= 12VDC, R
L
= 50
0.65
2.0
V
Gate NonTrigger Voltage
V
GD
Rated V
DRM
, R
L
= 50
, T
J
= +125
C 0.25
V
DC Holding Current
I
H
V
AK
= 12V, Gate Open
7.3
50
mA
Critical RateofRise of OffState
Voltage
dv/dt
Rated V
DRM
, Exponential Waveform,
T
C
= +125
C, Gate Open
30
V/
s
Note 1. Pulse Test: Pulse Width
1ms, Duty Cycle
2%.
.200 (5.08) Max
.562
(14.28)
Max
1.193
(30.33)
Max
.453
(11.5)
Max
Cathode
Gate
Anode
1/428 UNF2A