NTE2558
Silicon NPN Transistor
Darlington, High Voltage, High Speed Switch
w
/ Damper Diode
Features:
D
High Reliability
D
High CollectorBase Breakdown Voltage
D
OnChip Damper Diode
Applications:
D
HighVoltage, HighPower Switching
D
Induction Cookers
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
Collector Base Voltage, V
CBO
1500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Emitter Voltage, V
CEO
800V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Base Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
15A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
30A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current. I
B
3A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation (T
C
= +25
C), P
C
250W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Collector Cutoff Current
I
CBO
V
CB
= 800V, I
E
= 0
0.1
mA
Emitter Cutoff Current
I
EBO
V
EB
= 5V, I
C
= 0
600
mA
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 15A
25
CollectorEmitter Sustaining Voltage
V
CEO(sus)
I
C
= 100mA
800
V
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 15A, I
B
= 0.75A
3.0
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 15A, I
B
= 0.75A
2.5
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 5mA, I
E
= 0
150
0
V
Diode Forward Voltage
V
F
I
EC
= 15A
2.0
V
Fall Time
t
f
I
C
= 15A, I
B1
= 1A,
I
B2
= 5A, V
CC
= 200V,
R
L
= 13.3
2.0
s
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