NTE2585
Silicon NPN Transistor
High Voltage Amplifier
Features:
D
High Breakdown Voltage
D
Low Output Capacitance
D
High Reliability
D
Intended for HighDensity Mounting (Suitable for Sets Whose Height is Restricted)
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
Collector Base Voltage, V
CBO
800V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Emitter Voltage, V
CEO
800V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Base Voltage, V
EBO
7V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
20mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
60mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
1.65W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 800V, I
E
= 0
1
A
Emitter Cutoff Current
I
EBO
V
EB
= 5V, I
C
= 0
1
A
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 2mA
20
50
V
CE
= 5V, I
C
= 10mA
10
GainBandwidth Product
f
T
V
CE
= 10V, I
C
= 2mA
40
MHz
Output Capacitance
C
ob
V
CB
= 100V, f = 1MHz
1.6
pF
Collector Emitter Saturation Voltage
V
CE(sat)
I
C
= 10mA, I
B
= 2mA
1.0
V
Base Emitter Saturation Voltage
V
BE(sat)
I
C
= 10mA, I
B
= 2mA
1.5
V
Collector Base Breakdown Voltage V
(BR)CBO
I
C
= 100
A, I
E
= 0
800
V
Collector Emitter Breakdown Voltage V
(BR)CEO
I
C
= 1mA, R
BE
=
800
V
Emitter Base Breakdown Voltage
V
(BR)EBO
I
E
= 100
A, I
C
= 0
7
V
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