NTE263 (NPN) & NTE264 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in
a TO220 type package designed for general purpose amplifier and lowspeed switching applications.
Features:
D
High DC Current Gain:
h
FE
= 2500 Typ (NTE263)
= 3500 Typ (NTE264)
D
CollectorEmitter Sustaining Voltage: V
CEO(sus)
= 100V Min
D
Low CollectorEmitter Saturation Voltage:
V
CE(sat)
= 2V Max @ I
C
= 5A
D
Monolithic Construction with BuiltIn BaseEmitter Shunt Resistor
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
100V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CB
100V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EB
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
10A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
15A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
250mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
C), P
D
65W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
0.52W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
= +25
C), P
D
2W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
0.016W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature range, T
J
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
1.92
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient, R
thJA
62.5
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Sustaining Voltage
V
CEO(sus)
I
C
= 200mA, I
B
= 0, Note 1
100
V
Collector Cutoff Current
I
CEO
V
CE
= 100V, I
B
= 0
1.0
mA
I
CEX
V
CE
= 100V, V
EB(off)
= 1.5V
300
A
V
CE
= 100V, V
EB(off)
= 1.5V, T
C
= +125
C
3
mA
Emitter Cutoff Current
I
EBO
V
BE
= 5V, I
C
= 0
5
mA
ON Characteristics (Note 1)
DC Current Gain
h
FE
I
C
= 5A, V
CE
= 3V
1000
20000
I
C
= 10A, V
CE
= 3V
100
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 5A, I
B
= 0.01A
2
V
I
C
= 10A, I
B
= 0.1A
3
V
BaseEmitter ON Voltage
V
BE(on)
I
C
= 3A, V
CE
= 3V
2.8
V
I
C
= 10A, V
CE
= 3V
4.5
V
Dynamic Characteristics
SmallSignal Current Gain
|h
fe
|
I
C
= 1A, V
CE
= 5V, f
test
= 1MHz
20
Output Capacitance
C
ob
V
CB
= 10V, I
E
= 0, f = 1MHz
200
pF
SmallSignal Current Gain
h
fe
I
C
= 1A, V
CE
= 5V, f = 1kHz
1000
Note 1. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
NTE263
NTE264
B
C
E
B
C
E
.420 (10.67)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.250 (6.35)
Max
.147 (3.75)
Dia Max
.070 (1.78) Max
.100 (2.54)
Base
Collector/Tab
Emitter
.110 (2.79)
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