NTE2640
Silicon NPN Transistor
Color TV Horizontal Deflection Output
Features:
D
High Speed
D
High CollectorEmitter Breakdown Voltage
D
High Reliability
D
OnChip Damper Diode
Absolute Maximum Ratings: (T
A
+ 25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
1500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
800V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
6A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse
15A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
T
A
+ 25
C
2W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
+ 25
C
30W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
+ 25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CE
= 800V, I
E
= 0
10
A
I
CES
V
CE
= 1500V, R
BE
= 0
1.0
mA
Emitter Cutoff Current
I
EBO
V
EB
= 4V, I
C
= 0
40
mA
CollectorEmitter Sustaining Voltage
V
CEO(sus)
I
C
= 100mA, I
B
= 0
800
V
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 3.15A, I
B
= 630mA
3.0
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 3.15A, I
B
= 630mA
1.5
V
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 500mA
10
V
CE
= 5V, I
C
= 3.5A
5
8
Diode Forward Voltage
V
F
I
EC
= 6A
2
V
Fall Time
t
f
V
CC
= 200V, V
BE
= 2V, I
C
= 2A,
I
B1
= 400mA, I
B2
= 800mA,
Pulse Width = 20
s, Duty Cycle
1%
0.3
s
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