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Электронный компонент: NTE285

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NTE284 (NPN) & NTE285 (PNP)
Silicon Complementary Transistors
Audio Amplifier Output
Description:
The NTE284 (NPN) and NTE285 (PNP) are silicon complementary power transistors in a TO3 type
package designed for use in power amplifier applications.
Applications:
D
Recommended for 100W HighFidelity Audio Frequency Amplifier Output Stage
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
Collector to Base Voltage, V
CBO
180V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector to Emitter Voltage, V
CEO
180V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter to Base Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
16A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Current, I
E
16A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, P
C
150W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, T
j
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature, T
stg
65
C to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 90V, I
E
= 0
100
A
Emitter Cutoff Current
I
EBO
V
EB
= 5V, I
C
= 0
100
A
CollectorEmitter Breakdown Voltage V
(BR)CEO
I
C
= 0.1A, I
B
= 0
180
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 10mA, I
C
= 0
5
V
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 2A
70
140
V
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 10A, I
B
= 1A
3.0
V
Base to Emitter Voltage
V
BE
V
CE
= 5V, I
C
= 10A
2.5
V
Current Gain Bandwidth Product
f
T
V
CE
= 5V, I
C
= 2A
6
MH
Z
Output Capacitance
NTE284
C
ob
V
CB
= 10V, I
E
= 0, f = 1MH
Z
300
pF
NTE285
450
pF
Note 1. NTE284MP is a matched pair of NTE284 with their DC Current Gain (h
FE
) matched to within
10% of each other.
Note 2. NTE285MP is a matched pair of NTE285 with their DC Current Gain (h
FE
) matched to within
10% of each other.
Note 3. NTE285MCP is a matched complementary pair containing 1 each of NTE284 (NPN) and
NTE285 (PNP).
1.187 (30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02)
.312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/Case
Base
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max