NTE284 (NPN) & NTE285 (PNP)
Silicon Complementary Transistors
Audio Amplifier Output
Description:
The NTE284 (NPN) and NTE285 (PNP) are silicon complementary power transistors in a TO3 type
package designed for use in power amplifier applications.
Applications:
D
Recommended for 100W HighFidelity Audio Frequency Amplifier Output Stage
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
Collector to Base Voltage, V
CBO
180V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector to Emitter Voltage, V
CEO
180V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter to Base Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
16A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Current, I
E
16A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, P
C
150W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, T
j
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature, T
stg
65
C to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 90V, I
E
= 0
100
A
Emitter Cutoff Current
I
EBO
V
EB
= 5V, I
C
= 0
100
A
CollectorEmitter Breakdown Voltage V
(BR)CEO
I
C
= 0.1A, I
B
= 0
180
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 10mA, I
C
= 0
5
V
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 2A
70
140
V
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 10A, I
B
= 1A
3.0
V
Base to Emitter Voltage
V
BE
V
CE
= 5V, I
C
= 10A
2.5
V
Current Gain Bandwidth Product
f
T
V
CE
= 5V, I
C
= 2A
6
MH
Z
Output Capacitance
NTE284
C
ob
V
CB
= 10V, I
E
= 0, f = 1MH
Z
300
pF
NTE285
450
pF
Note 1. NTE284MP is a matched pair of NTE284 with their DC Current Gain (h
FE
) matched to within
10% of each other.
Note 2. NTE285MP is a matched pair of NTE285 with their DC Current Gain (h
FE
) matched to within
10% of each other.
Note 3. NTE285MCP is a matched complementary pair containing 1 each of NTE284 (NPN) and
NTE285 (PNP).