NTE5437 & NTE5438
Silicon Controlled Rectifier (SCR)
8 Amp
Description:
The NTE5437 and NTE5438 are silicon controlled rectifiers (SCR) in a TO220 type package designed
for general purpose high voltage applications where gate sensitivity is required.
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
Repetitive Peak OffState Voltage (T
J
= 40
to +125
C, R
GK
= 1k
), V
DRM
, V
RRM
NTE5437
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5438
600V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
OnState Current (All Conducting Angles, T
C
= +85
C), I
T(RMS)
8A
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Average OnState Current (Half Cycle,
= 180
, T
C
= +85
C), I
T(AV)
5.1A
. . . . . . . . . . . . . . . . . . . .
NonRepetitive OnState Current, I
TSM
Half Cycle, 60Hz
88A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Half Cycle, 50Hz
80A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Fusing Current (t= 10ms, Half Cycle), I
2
t
32A
2
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Reverse Gate Voltage (I
GR
= 50
A), V
GRM
8V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Current (10
s Max), I
GM
2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Dissipation (10
s Max), P
GM
5W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Dissipation (20ms Max), P
G(AV)
0.5W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Oprating Junction Temperature Range, T
J
40
to +125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
40
to +125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1.6mm from case, 10sec Max), T
L
+250
C
. . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
4K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient, R
thJA
60K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Max
Unit
OffState Leakage Current
I
DRM
, I
RRM
V
DRM
+ V
RRM
= Rated Voltage,
T
J
= +125
C
0.5
mA
R
GK
= 1k
T
J
= +25
C
5.0
A
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