NTE2941
MOSFET
NCh, Enhancement Mode
High Speed Switch
Features:
D
Low Static DrainSource ON Resistance
D
Improved Inductive Ruggedness
D
Fast Switching Times
D
Low Input Capacitance
D
Extended Safe Operating Area
D
TO220 Type Isolated Package
Absolute Maximum Ratings:
DrainSource Voltage (Note 1), V
DSS
60V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DrainGate Voltage (R
GS
= 1M
, Note 1), V
DGR
60V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GateSource Voltage, V
GS
20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain Current, I
D
Continuous
T
C
= +25
C
28A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +100
C
19.6A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed (Note 2)
200A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current (Pulsed), I
GM
1.5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Energy (Note 3), E
AS
48mJ
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Avalanche Current, I
AS
28A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
C), P
D
48W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
0.52W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
55
to +175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Lead Temperature (During Soldering, 1/8" from case, 5sec), T
L
+300
C
. . . . . . . . . . . . . .
Thermal Resistance:
Maximum JunctiontoCase, R
thJC
1.92K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical CasetoSink (Mounting surface flat, smooth, and greased), R
thCS
0.5K/W
. . . . . . .
Maximum JunctiontoAmbient (Free Air Operation), R
thJA
62.5K/W
. . . . . . . . . . . . . . . . . . . .
Note 1. T
J
= +25
to +175
C.
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 3. L = 50
H, V
DD
= 25V, R
G
= 25
, Starting T
J
= +25
C.
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
DrainSource Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
A
60
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
2.0
4.0
V
GateSource Leakage Forward
I
GSS
V
GS
= 20V
100
nA
GateSource Leakage Reverse
I
GSS
V
GS
= 20V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Max. Rating, V
GS
= 0
250
A
V
DS
= 0.8 Max. Rating, T
C
= +150
C
1000
A
Static DrainSource ON Resistance
R
DS(on)
V
GS
= 10V, I
D
= 25A, Note 4
0.028
Forward Transconductance
g
fs
V
DS
50V, I
D
= 25A, Note 4
15
mho
s
Input Capacitance
C
iss
V
GS
= 0V, V
DS
= 25V, f = 1MHz
2450
pF
Output Capacitance
C
oss
740
pF
Reverse Transfer Capacitance
C
rss
360
pF
TurnOn Delay Time
t
d(on)
V
DD
= 0.5 BV
DSS,
I
D
= 50A, Z
O
= 9.1
,
32
ns
Rise Time
t
r
(MOSFET switching times are essentially
independent of operating temperature)
210
ns
TurnOff Delay Time
t
d(off)
independent of operating temperature)
75
ns
Fall Time
t
f
130
ns
Total Gate Charge
(GateSource Plus GateDrain)
Q
g
V
GS
= 10V, I
D
= 50A, V
DS
= 0.8 Max.
87
nC
GateSource Charge
Q
gs
Rating, (Gate charge is essentially
independent of operating temperature)
26.6
nC
GateDrain ("Miller") Charge
Q
gd
independent of operating temperature)
30.6
nC
SourceDrain Diode Ratings and Characteristics
Continuous Source Current
I
S
(Body Diode)
150
A
Pulse Source Current
I
SM
(Body Diode) Note 2
200
A
Diode Forward Voltage
V
SD
T
J
= +25
C, I
S
= 50A, V
GS
= 0V, Note 4
2.5
V
Reverse Recovery Time
t
rr
T
J
= +25
C, I
F
= 50A, dI
F
/dt = 100A/
s
250
ns
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
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