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Электронный компонент: NTE2955

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NTE2955
MOSFET
NChannel, Enhancement Mode
High Speed Switch
Application:
D
C
S
Switch for CRT Display Monitor
Absolute Maximum Ratings: (T
C
= +25
C unless otherwise specified)
DrainSource Voltage (V
GS
= 0V), V
DSS
250V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GateSource Voltage (V
DS
= 0V), V
GS
20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain Current, I
D
Continuous
10A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed
30A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Avalanche Drain Current (Pulsed, L = 200
H), I
DA
10A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Power Dissipation, P
D
32W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Channel Temperature Range, T
ch
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, ChanneltoCase, R
th(chc)
3.91
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Isolation Voltage (AC for 1 minute, TerminaltoCase), V
ISO
2000V
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
ch
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
DrainSource Breakdown Voltage
V
(BR)DSS
V
DS
= 0V, I
D
= 1mA
250
V
GateSource Leakage
I
GSS
V
GS
=
20V, V
DS
= 0V
10
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 250V, V
GS
= 0
1.0
mA
Gate Threshold Voltage
V
GS(th)
V
DS
= 10V, I
D
= 1mA
2.0
3.0
4.0
V
Static DrainSource ON Resistance
R
DS(on)
V
GS
= 10V, I
D
= 5A
0.40
0.52
DrainSource OnState Voltage
V
DS(on)
V
GS
= 10V, I
D
= 5A
2.0
2.6
V
Forward Transfer Admittance
|y
fs
|
V
GS
= 10V, I
D
= 5A
9.0
S
Electrical Characteristics (Cont'd): (T
ch
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input Capacitance
C
iss
V
GS
= 0V, V
DS
= 25V, f = 1MHz
950
pF
Output Capacitance
C
oss
90
pF
Reverse Transfer Capacitance
C
rss
25
pF
TurnOn Delay Time
t
d(on)
V
DD
= 150V
,
I
D
= 5A, V
GS
= 10V,
20
ns
Rise Time
t
r
R
GEN
= R
GS
= 50
25
ns
TurnOff Delay Time
t
d(off)
150
ns
Fall Time
t
f
40
ns
Diode Forward Voltage
V
SD
I
S
= 5A, V
GS
= 0V
0.95
V
.126 (3.2) Dia Max
.181 (4.6)
Max
.405 (10.3)
Max
.114 (2.9)
.252
(6.4)
G
D
S
Isol
.100 (2.54)
.098 (2.5)
.622
(15.0)
Max
.531
(13.5)
Min
.118
(3.0)
Max