NTE2976
MOSFET
NChannel, Enhancement Mode
High Speed Switch
Features:
D
Low Input Capacitance
D
Low Static R
DS(on)
D
Fast Switching Time
D
Guaranteed Avalanche Resistance
Applications:
D
Switching Power Supply of AC 240V Input
D
High Voltage Power Supply
D
Inverter
Absolute Maximum Ratings: (T
C
= +25
C unless otherwise specified)
DrainSource Voltage, V
DSS
700V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GateSource Voltage, V
GSS
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain Current, I
D
Continuous DC
6A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Pulse Width
10
s, Duty Cycle
1/100)
18A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous DC Source Current, I
S
6A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation, P
T
50W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Avalanche Current (T
ch
= +150
C), I
AR
6A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Avalanche Energy (T
ch
= +25
C), E
AS
190mJ
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Avalanche Energy (T
ch
= +25
C), E
AR
19mJ
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Channel Temperature, T
ch
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
2.5
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Dielectric Strength (TerminalstoCase, AC, 1 minute), V
dis
2kV
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Mounting Torque, TOR
Maximum
0.5N
m
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Recommended
0.3N
m
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
DrainSource Breakdown Voltage
V
(BR)DSS
I
D
= 1mA, V
GS
= 0V
700
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 700V, V
GS
= 0V
250
A
GateSource Leakage Current
I
GSS
V
GS
=
30V, V
DS
= 0V
0.1
A
Forward Transconductance
g
fs
I
D
= 3A, V
DS
= 10V
3
5
S
Static DrainSource OnState Resistance
R
DS(on)
I
D
= 3A, V
GS
= 10V
1.5
2.0
Gate Threshold Voltage
V
TH
I
D
= 1mA, V
DS
= 10V
2.5
3.0
3.5
V
SourceDrain Diode Forward Voltage
V
SD
I
S
= 3A, V
GS
= 0V
1.5
V
Total Gate Charge
Q
g
V
DD
= 400V, V
GS
= 10V, I
D
= 6A
35
nC
Input Capacitance
C
iss
V
DS
= 10V, V
GS
= 0V, f = 1MHz
1250
pF
Reverse Transfer Capacitance
C
rss
250
pF
Output Capacitance
C
oss
530
pF
TurnOn Time
t
on
I
D
= 3A, R
L
= 50
, V
GS
= 10V
60
110
ns
TurnOff Time
t
off
160
250
ns
G
D
S
.100 (2.54)
.059 (1.5) Max
.122 (3.1)
Dia
.165
(4.2)
.531
(13.5)
Min
.295
(7.5)
.669
(17.0)
Max
.402 (10.2) Max
.224 (5.7) Max
.114 (2.9)
Max
.173 (4.4)
Max
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