NTE2986
Logic Level MOSFET
NChannel, Enhancement Mode
High Speed Switch
Features:
D
Dynamic dv/dt Rating
D
Logic Level Gate Drive
D
R
DS
(on) Specified at V
GS
= 4V & 5V
D
+175
C Operating Temperature
D
Fast Switching
D
Ease of Paralleling
D
Simple Drive Requirements
Absolute Maximum Ratings:
Drain Current, I
D
Continuous (V
GS
= 5V)
T
C
= +25
C
50A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +100
C
36A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed (Note 1)
200A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
C), P
D
150W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
1.0W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GateSource Voltage, V
GS
10V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Energy (Note 2), E
AS
110mJ
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Diode Recovery dv/dt (Note 3), dv/dt
4.5V/ns
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
55
to +175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), T
L
+300
C
. . . . . . . . . .
Mounting Torque, 632 or M3 Screw
10 lbf
in (1.1 N
m)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance:
Maximum JunctiontoCase, R
thJC
1.0K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical CasetoSink (Mounting surface flat, smooth, and greased), R
thCS
0.5K/W
. . . . . . .
Maximum JunctiontoAmbient (Free Air Operation), R
thJA
62K/W
. . . . . . . . . . . . . . . . . . . . .
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. L = 179
H, V
DD
= 25V, R
G
= 25
, I
AS
= 51A, Starting T
J
= +175
C.
Note 3. I
SD
51A, di/dt
250A/
s, V
DD
V
(BR)DSS
, T
J
+175
C.
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
DrainSource Breakdown Voltage
BV
DSS
V
GS
= 0v, I
D
= 250
A
60
V
Breakdown Voltage Temperature
Coefficient
V
(BR)DSS
/
T
J
Reference to +25
C, I
D
= 1mA
0.07
V/
C
Static DrainSource ON Resistance
R
DS(on)
V
GS
= 5V, I
D
= 31A, Note 4
0.028
V
GS
= 4V, I
D
= 25A, Note 4
0.039
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
1.0
2.0
V
Forward Transconductance
g
fs
V
DS
25V, I
D
= 31A, Note 4
23
mhos
DraintoSource Leakage Current
I
DSS
V
DS
= 60V, V
GS
= 0
25
A
V
DS
= 48V, V
GS
= 0V, , T
C
= +150
C
250
A
GateSource Leakage Forward
I
GSS
V
GS
= 10V
100
nA
GateSource Leakage Reverse
I
GSS
V
GS
= 10V
100
nA
Total Gate Charge
Q
g
V
GS
= 5V, I
D
= 51A, V
DS
= 48V
66
nC
GateSource Charge
Q
gs
12
nC
GateDrain ("Miller") Charge
Q
gd
43
nC
TurnOn Delay Time
t
d(on)
V
DD
= 30V
,
I
D
= 51A, R
G
= 4.6
,
17
ns
Rise Time
t
r
R
D
= 0.56
230
ns
TurnOff Delay Time
t
d(off)
42
ns
Fall Time
t
f
110
ns
Internal Drain Inductance
L
D
Between lead, 6mm (0.25") from
4.5
nH
Internal Source Inductance
L
S
package and center of die contact
7.5
nH
Input Capacitance
C
iss
V
GS
= 0V, V
DS
= 25V, f = 1MHz
3300
pF
Output Capacitance
C
oss
1200
pF
Reverse Transfer Capacitance
C
rss
200
pF
SourceDrain Diode Ratings and Characteristics
Continuous Source Current
I
S
(Body Diode)
50
A
Pulse Source Current
I
SM
(Body Diode) Note 1
200
A
Diode Forward Voltage
V
SD
T
J
= +25
C, I
S
= 51A, V
GS
= 0V, Note 4
2.5
V
Reverse Recovery Time
t
rr
T
J
= +25
C, I
F
= 51A, di/dt = 100A/
s,
130
180
ns
Reverse Recovery Charge
Q
rr
Note 4
0.84
1.3
C
Forward TurnOn Time
t
on
Intrinsic turnon time is neglegible
(turnon is dominated by L
S
+ L
D
)
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
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