NTE29 (NPN) & NTE30 (PNP)
Silicon Complementary Transistors
High Power, High Current Switch
Description:
The NTE29 (NPN) and NTE30 (PNP) are compelmentary power transistors in a TO3 type case designed
for use in high power amplifier and switching circuit applications.
Features:
D
High Current Capability: I
C
= 50A (Continuous)
D
DC Current Gain: h
FE
= 15 to 60 @ I
C
= 25A
D
Low CollectorEmitter Saturation Voltage: V
CE(sat)
= 1V Max @ I
C
= 25A
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CB
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EB
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
50A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
15A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
C), P
D
300W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
1.715W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
0.584
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ
Max
Unit
OFF Characteristics
CollectorEmitter Sustaining Voltage
V
CEO(sus)
I
C
= 0.2A, I
B
= 0, Note 1
80
V
Collector Cutoff Current
I
CEO
V
CE
= 40V, I
B
= 0
1
mA
I
CEX
V
CE
= 80V, V
EB(off)
= 1.5V
2
mA
V
CE
= 80V, V
EB(off)
= 1.5V,
T
C
= +150
C
10
mA
I
CBO
V
CB
= 80V, I
E
= 0
2
mA
Emitter Cutoff Current
I
EBO
V
BE
= 5V, I
C
= 0
5
mA
Electrical Characteristics (Cont'd): (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ
Max
Unit
ON Characteristics (Note 1)
DC Current Gain
h
FE
I
C
= 25A, V
CE
= 2V
15
60
I
C
= 50A, V
CE
= 5V
5
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 25A, I
B
= 2.5A
1
V
I
C
= 50A, I
B
= 10A
5
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 25A, I
B
= 2.5A
2
V
BaseEmitter ON Voltage
V
BE(on)
I
C
= 25A, V
CE
= 2V
2
V
Dynamic Characteristics
Current GainBandwidth Product
f
T
I
C
= 5A, V
CE
= 10V, f = 1MHz
2
MHz
Output Capacitance
C
ob
V
CB
= 10V, I
E
= 0, f = 0.1MHz
1200
pF
SmallSignal Current Gain
h
fe
I
C
= 10A, V
CE
= 5V, f = 1kHz
15
Note 1. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
1.187 (30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02)
.312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/Case
Base
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
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