NTE3028
Infrared Emitting Diode
PN Gallium Arsenide
Description:
The NTE3028 is designed for applications requiring high power output, low drive power, and very fast
response time. This device is used in industrial processing and control, light modulators, shaft or posi-
tion encoders, punched card readers, optical switching, and logic circuits. It is spectrally matched for
use with silicon detectors.
Features:
D
High Power Output
D
Infrared Emission
D
Low Drive Current
D
Popular TO18 Type Package for Easy Handling and Mounting
Absolute Maximum Ratings:
Reverse Voltage, V
R
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Current, I
F
Continuous
60mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (PW = 100
s, Duty Cycle = 2%)
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25
C), P
D
250mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C (Note 1)
2.27mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
A
55
to +125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Printed circuit board mounting.
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Reverse Leakage Current
I
R
V
R
= 3V
2
nA
Reverse Breakdown Voltage
V
(BR)R
I
R
= 100
A
6
20
V
Forward Voltage
V
F
I
F
= 50mA
1.32
1.5
V
Total Capacitance
C
T
V
R
= 0V, f = 1MHz
18
pF
Optical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Total Output Power
P
O
I
F
= 60mA, Note 2
2.5
mW
I
F
= 100mA, Note 2, Note 3
1.0
4.0
mW
Radiant Intensity
I
O
I
F
= 100mA, Note 3, Note 4
1.5
mW/
steradian
Peak Emission Wavelength
P
940
nm
Spectral Line Half Width
40
nm
Note 2. Power Output, P
O
, is the total power radiated by th device into a solid angle of 2
steradians.
It is measured by directing all radiation leaving the device, within this solid angle, onto a cali-
brated silicon solar cell.
Note 3. PW = 100
s, Duty Cycle = 2%.
Note 4. Irradiance from a Light Emitting Diode (LED) can be calculated by:
H =
I
e
d
2
where
H is irradiance in mW/cm
2
I
e
is radiant intensity in mW/steradian
d
2
is distance from LED to the detector in cm
.186 (4.72) Dia
.145 (3.68) Dia
.018 (0.45) Dia Typ
.195
(4.95)
.500
(12.7)
Min
Cathode
Anode
.030 (.762)
Seating Plane
.220 (5.59) Dia
.040 (1.02)
.100 (2.54)
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