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Электронный компонент: NTE3033

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NTE3033
Infrared Photodiode
Features:
D
High Sensitivity, High Reliability
D
Fast Response, High Speed Modulation
D
Peak Sensitivity Wavelength Compatible with Infrared Emitters
D
Wide Detection Area, Wide Half Angle
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
Reverse Voltage, V
R
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, P
D
100mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature range, T
opr
30
to +85
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
40
to +100
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ElectroOptical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Dark Current
I
D
V
R
= 10V
5
50
nA
Light Current
I
L
V
R
= 10V, L = 1000 1x, Note 1
35
50
A
Peak Emission Wavelength
P
V
R
= 10V
900
nm
Rise Time
t
r
V
R
= 10V, R
L
= 1k
50
ns
V
R
= 10V, R
L
= 100k
5
s
Fall Time
t
f
V
R
= 10V, R
L
= 1k
50
ns
V
R
= 10V, R
L
= 100k
5
s
Capacitance
C
t
V
R
= 0, f = 1MHz
70
pF
Beam Angle
Note 2
65
deg
Note 1. Source: Tungsten filament lamp 2856
K
Note 2. The angle when the light current is halved.
.111 (2.8)
.276 (7.0)
.197
(5.0)
.315
(8.0)
.512
(13.0)
Min
.200 (5.08)
.024 (0.6)
*
* Denotes Anode mark
Anode
Cathode
.091
(2.3)
Device
Center
.016 (0.41)