NTE3040
Optoisolator
NPN Transistor Output
Description:
The NTE3040 is a gallium arsenide, infrared emitting diode in a 6Lead DIP type package coupled
with a silicon phototransistor.
Absolute Maximum Ratings: (T
A
= +25
C, unless otherwise specified)
Infrared Emitting Diode
Power Dissipation, P
D
200mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above 25
C ambient
2.6mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Current (Continuous), I
C
60mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Current (Peak), I
C
3A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(Pulse Width 1
sec, 300pps)
Reverse Voltage, V
R
3V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Phototransistor
Power Dissipation, P
D
200mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above 25
C ambient
2.6mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector to Emitter Voltage, V
CEO
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector to Base Voltage, V
CBO
70V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter to Collector Voltage, V
ECO
7V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current (Continuous), I
C
100mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device
Storage Temperature, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature, T
opr
55
to +100
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Soldering Temperature (10 seconds)
+260
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Surge Isolation Voltage (Input to Output)
(Peak)
1500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(RMS)
1060V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Infrared Emitting Diode
Forward Voltage
V
F
I
F
= 10mA
1.1
1.5
V
Reverse Current
I
R
V
R
= 3V
10
mA
Capacitance
C
J
V = 0, f = 1MH
Z
50
pf
Electrical Characteristics (Cont'd): (T
A
= +25
C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Phototransistor
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 10mA, I
F
= 0
30
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 100
A, I
F
= 0
70
V
EmitterCollector Breakdown Voltage
V
(BR)ECO
I
E
= 100
A, I
F
= 0
7
V
Collector Dark Current
I
CEO
V
CE
= 10V, I
F
= 0
5
50
nA
Capacitance
C
J
V
CE
= 10V, f = 1MH
Z
2
pf
Coupled Characteristics
DC Current Transfer Ratio
CTR
I
F
= 10mA, V
CE
= 10V
6
%
CollectorEmitter Saturation Voltage
V
CEO(sat)
I
F
= 60mA, I
C
= 1.6mA
100
V
Isolation Resistance
R
(IO)
V
(IO)
= 500V
DC
100
G
Input to Output Capacitance
C
(IO)
V
(IO)
= 0, f = 1MH
Z
2
pf
Switching Speeds
t
r
, t
f
V
CE
= 10V,
I
CE
= 2mA
5
s
R
L
= 100
I
CB
= 50
A
3
s
.260
(6.6)
Max
.350
(8.89)
Max
.350 (8.89)
Max
.300 (7.62)
.200 (5.08)
Max
.085 (2.16) Max
.070 (1.78) Max
.100 (2.54)
1
2
3
5
4
6
Emitter
Collector
Base
1
2
Anode
Cathode
3
N.C.
6
5
4
Pin Connection Diagram
PDF 
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