NTE3043
Optoisolator
NPN Transistor Output
Description:
The NTE3043 is an optically coupled isolator consisting of a Gallium Arsenide infrared emitting diode
and an NPN silicon phototransistor mounted in a standard 4Lead DIP type package.
Features:
D
High Output Voltage: V
(BR)CEO
= 80V
D
Controlled Current Transfer Ratio
D
Maximum Specified Switching Times
D
High Isolation Voltage
D
Low Cost DIP Type Package
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
Input LED
DC Forward Current, I
F
Continuous
60mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (1
s p.w. 300pps)
3A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Reverse Voltage, V
R
3V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, P
D
90mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
1.2mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Transistor
CollectorEmitter Voltage, V
CEO
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CBO
100V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, P
D
200mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
2.67mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Coupled
Power Dissipation, P
D
260mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
3.5mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
opr
55
to +100
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/16" from case, 10sec), T
L
+260
C
. . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input LED
Reverse Leakage Current
I
R
V
R
= 3V
10
A
Forward Voltage
V
F
I
F
= 20mA
1.5
V
Reverse Breakdown Voltage
V
R
I
R
= 10
A
3.0
V
Forward Voltage Temperature Coefficient
1.8
mV/
C
Junction Capacitance
C
J
V
F
= 0, f = 1MHz
50
pF
V
F
= 1V, f = 1MHz
65
pF
Output Transistor
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 1mA, I
F
= 0
80
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 100
A, I
F
= 0
5
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 10
A
100
V
CollectorEmitter Dark Current
I
CEO
V
CE
= 10V, I
F
= 0
60
nA
DC Current Gain
h
FE
V
CE
= 6V, I
C
= 100
A
170
CollectorEmitter Capacitance
V
CE
= 0, f = 1MHz
8
pF
CollectorBase Capacitance
V
CE
= 5V, f = 1MHz
20
pF
EmitterBase Capacitance
V
EB
= 0, f = 1MHz
10
pF
Coupled
DC Current Transfer Ratio
I
C
/I
F
I
F
= 10mA, V
CE
= 10V
70
125
210
%
I
F
= 16mA, V
CE
= 0.4V
12.5
%
Current Transfer Ratio, CollectorBase
I
F
= 10mA, V
CB
= 10V
0.15
%
InputOutput Isolation Resistance
R
IO
V
ISO
= 500V
DC
10
CollectorEmitter Saturation Voltage
V
CE(sat)
I
F
= 16mA, I
C
= 2mA
0.4
V
InputOutput Capacitance
C
IO
f = 1MHz
0.5
pF
Surge Isolation
Relative Humidity < 50%,
I
1
0 < 10
b
4000
V
DC
t = 1sec
3000
V
AC
Steady State Isolation
Relative Humidity < 50%
3500
V
DC
t = 1min
2500
V
AC
Switching Times
NonSaturated TurnOn Time
t
on
R
L
= 100, I
C
= 200mA, V
CC
= 5V
4.5
15
s
NonSaturated TurnOff Time
t
off
3.5
15
s
Saturated TurnOn Time
t
on
R
L
= 1.9k
, I
F
= 16mA
3.2
s
Saturated TurnOff Time
t
off
50
s
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