NTE308P
Integrated Thyristor/Rectifier (ITR)
TV Horizontal Deflection & Commutating Switch
Absolute Maximum Ratings:
Repetitive Peak Forward OffState Voltage (T
C
= +85
C, Note 1), V
DRM
750V
. . . . . . . . . . . . . . . . . .
Repetitive Peak Reverse Voltage (T
C
= +85
C, Note 1), V
RRM
700V
. . . . . . . . . . . . . . . . . . . . . . . . . .
Mean OnState Current (T
C
= +60
C, 50Hz Sine Wave, Conduction Angle of 180
), I
O
, I
T(AV)
Rectifier
3.0A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SCR
5.0A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS OnState Current (T
C
= +60
C, 50Hz Sine Wave, Conduction Angle of 180
), I
F(RMS)
, I
T(RMS)
Rectifier
4.5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SCR
8.0A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Surge Current (T
C
= +85
C, One Full Cycle), I
TSM
, I
FSM
60Hz Sinusoidal
80A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50Hz Sinusoidal
70A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Rate of Change of OnState Current (V
D
= 700V, I
GT
= 50mA, t
r
= 0.1
s), di/dt
200A/
s
. . . . . . . . .
Peak Forward Gate Power (Negative Gate Bias = 10V, 10
s max, Note 2), P
GM
25W
. . . . . . . . . .
Peak Reverse Gate Power (Negative Gate Bias = 10V, 10
s max, Note 2), P
RGM
25W
. . . . . . . .
Operating Case Temperature Range, T
C
40
to +85
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
40
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, JunctiontoCase, R
thJC
2.5
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/8" from case, 10sec max), T
L
+225
C
. . . . . . . . . . . . . . . . . .
Note 1. These values do not apply if there is a positive gate signal. Gate must be open or negatively
biased.
Note 2. Any product of gate current and gate voltage which results in a gate power less than the maxi-
mum is permitted, provided that the maximum reverse gate bias (as specified) is not exceeded.
Electrical Characteristics: (T
C
= +25
C "Maximum Ratings" unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Peak Forward Blocking Current
I
DRM
V
D
= 700V, T
C
= +85
C
0.5
1.5
mA
Instantaneuos Voltage
Rectifier
V
F
I
F
= 10A
1.35
2.0
V
SCR
V
T
I
T
= 30A
1.75
3.0
V
Gate Trigger Current, Continuous DC
I
GT
Anode Voltage = 12V, R
L
= 30
15
45
mA
Gate Trigger Voltage, Continuous DC
V
GT
Anode Voltage = 12V, R
L
= 30
1.8
4.0
V
Electrical Characteristics (Cont'd): (T
C
= +25
C "Maximum Ratings" unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Rate of Rise of OffState Voltage
dv/dt
V
D
= 700V, V
G
= 2.5V, T
C
= +85
C
1000
V/
s
Reverse Recovery Time (Rectifier Only)
t
rr
I
FM
= 10A, di
F
/dt = 10A/
s, t
p
= 3
s
0.5
0.7
s
Circuit Commutated TurnOff Time
t
q
Minimum Negative Gate Bias = 2.5V,
dv/dt = 400V/
s, T
C
= +80
C, Note 3
4.2
s
Note 3. Turnoff time increases with temperature; therefore, case temperature must not exceed the
level indicated.
.250 (6.35)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.110 (2.79)
.420 (10.67)
Max
.070 (1.78) Max
Gate
.100 (2.54)
Anode/Tab
Cathode
.147 (3.75)
Dia Max
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