NTE215
Silicon NPN Transistor
Darlington Driver
Description:
The NTE215 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications in-
clude motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers.
Features:
D
High DC Current Gain
D
Large Current Capacity and Wide ASO
D
Low Saturation Voltage
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
Collector to Base Voltage, V
CBO
110V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector to Emitter Voltage, V
CEO
100V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter to Base Voltage, V
EBO
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
8A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
12A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (T
A
= +25
C), P
C
2.5W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (T
C
= +25
C), P
C
60W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 80V, I
E
= 0
0.1
mA
Emitter Cutoff Current
I
EBO
V
EB
= 5V, I
C
= 0
3.0
mA
DC Current Gain
h
FE
V
CE
= 3V, I
C
= 4A
1500
4000
Current GainBandwidth Product
f
T
V
CE
= 5V, I
C
= 4A
20
MHz
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 4A, I
B
= 8mA
0.9
1.5
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 4A, I
B
= 8mA
2.0
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 5mA, I
E
= 0
110
V
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 50mA, R
BE
=
100
V
TurnOn Time
t
on
V
CC
= 50V, V
BE
= 5V,
0.6
s
Storage Time
t
stg
500I
B1
= 500I
B2
= I
C
= 4A,
PW = 50
s, Duty Cycle
1%
4.8
s
Fall Time
t
f
PW = 50
s, Duty Cycle
1%
1.6
s
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