NTE3102
Photon Coupled Interrupter Module
NPN Transistor
Description:
The NTE3102 Interrupter Module is a gallium arsenide infrared emitting diode coupled to a silicon
phototransistor in a plastic housing. The packaging system is designed to optimize the mechanical
resolution, coupling efficiency, ambient light rejection, cost, and reliability. The gap in the housing pro-
vides a means of interrupting the signal with an opaque material, switching the output from an "ON"
into an "OFF" state.
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
Total Device
Operating Temperature Range, T
J
55
to +100
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +100
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 5sec Max), T
L
+260
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Infrared Emitting Diode
Forward Current, I
F
Continuous
60mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Pulse Width
1
s, PRR
300pps)
3A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage, V
R
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, P
E
100mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
1.33mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Phototransistor
Power Dissipation, P
D
150mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
2.0mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
100mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
55V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterCollector Voltage, V
ECO
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C, Note 1 unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Emitter
Reverse Breakdown Voltage
V
(BR)R
I
R
= 10
A
6
V
Forward Voltage
V
F
I
F
= 60mA
1.7
V
Reverse Current
I
R
V
R
= 5V
100
nA
Capacitance
C
i
V = 0, f = 1MHz
30
pF
Note 1. Stray irradiation can alter values of characteristics. Adequate shielding should be provided.
Electrical Characteristics (Cont'd): (T
A
= +25
C, Note 1 unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Detector
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 1mA
55
V
EmitterCollector Breakdown Voltage
V
(BR)ECO
I
E
= 100
A
6
V
Collector Dark Current
I
CEO
V
CE
= 45V
100
nA
Capacitance
C
ce
V
CE
= 5V, f = 1MHz
3.3
5.0
pF
Coupled
Photodiode Current
I
CE(on)
V
CE
= 5V, I
F
= 5mA
0.15
mA
V
CE
= 5V, I
F
= 20mA
1.0
mA
V
CE
= 5V, I
F
= 30mA
1.9
mA
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 1.8mA, I
F
= 30mA
0.4
V
TurnOn Time
t
on
V
CC
= 5V, I
F
= 30mA, R
L
= 2.5k
8
s
TurnOff Time
t
off
50
s
Note 1. Stray irradiation can alter values of characteristics. Adequate shielding should be provided.
.303 (7.69)
Min
.124 (3.15
.110 (2.79) Max
.295 (7.49) Max
.246 (6.25)
Seating
Plane
.136 (3.54) Min
Sensing Area
.433 (11.0)
Max
.315 (8.0) Min
E
D
+
+
D Detector
E Emitter
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