NTE316
Silicon NPN Transistor
High Gain, Low Noise Amp
Features:
D
High Current GainBandwidth Product
D
Low Noise Figure
D
High Power Gain
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
15V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CBO
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
3V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
50mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Continuous Device Dissipation (T
A
= +25
C), P
D
200mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
1.14mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 5mA, I
B
= 0
15
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 0.1mA, I
E
= 0
30
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 0.1mA, I
C
= 0
3.5
V
Collector Cutoff Current
I
CBO
V
CB
= 5V, I
E
= 0
10
nA
ON Characteristics
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 2mA
25
250
Dynamic Characteristics
Current GainBandwidth Product
f
T
V
CE
= 5V, I
C
= 10mA, f = 100MHz
1400
MHz
CollectorBase Capacitance
C
cb
V
CB
= 10V, I
E
= 0, f = 1kHz
0.8
1.0
pF
SmallSignal Current Gain
h
fe
V
CE
= 5V, I
C
= 2mA, f = 1kHz
25
250
CollectorBase Time Constant
r
b
'C
c
V
CE
= 5V, I
E
= 2mA, f = 31.8MHz
2
12
ps
Noise Figure
NF
V
CE
= 5V, I
C
= 2mA, R
S
= 50
,
f = 450MHz
4.5
dB
Functional Test
CommonEmitter Amplifier Power Gain
G
pe
V
CE
= 5V, I
C
= 2mA, f = 450MHz
15
dB
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