NTE318
Silicon NPN Transistor
RF Power Output
Description:
The NTE318 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communica-
tions. This device utilizes improved metallization systems to achieve extreme ruggedness under se-
vere operating conditions.
Features:
D
Designed for HF military and commercial equipment 40W minimum with greater than 10.0dB gain
D
Withstands severe mismatch under operating conditions
D
Low inductance Stripline Package
Absolute Maximum Ratings:
Collector Base Voltage, V
CBO
36V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
18V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
4V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Collector Current, I
C
6A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (+25
C), P
T
80W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
2.2
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature Range, T
J
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
CollectorEmitter Breakdown Voltage V
(BR)CEO
I
C
= 200mA, I
B
= 0, Note 1
18
V
CollectorEmitter Breakdown Voltage V
(BR)CES
I
C
= 200mA, V
BE
= 0, Note 1
36
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 2.5mA, I
C
= 0
4
V
Collector CutOff Current
I
CBO
V
CB
= 15V, I
E
= 0
1
mA
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 250mA
10
Gain Bandwidth
f
t
V
CE
= 13.5V, I
C
= 100mA
200
MHz
Output Capacitance
C
ob
V
CB
= 12.5V, I
C
= 0,
F
O
= 1.0MHz
200
pF
Amplifier Power Out
P
O
28MHz/12.5V
47
W
Amplifier Power Gain
P
g
10
dB
Note 1. Pulsed through 25mH Inductor
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