NTE320/NTE320F
Silicon NPN RF Power Transistor
40W @ 175MHz
Description:
The NTE320 and NTE320F are silicon NPN power transistors designed for 12.5V VHF largesignal
amplifier applications required in commercial and industrial equipment operating to 300MHz.
Features:
D
Specified 12.5V, 175MHz Characteristics:
Output Power: 40W
Minimum Gain: 4.5dB
Efficiency: 70%
D
Available in Two Different Package Styles:
T72 Stud Mount: NTE320
W52K Flange Mount: NTE320F
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
18V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CBO
36V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
4V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
7A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
C, Note 1), P
D
80W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
460mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stud Torque (NTE320 Only, Note 2)
6.5in. lb.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. These devices are designed for RF operation. The total device dissipation rating applies
only when the devices are operated as RF amplifiers.
Note 2. For repeated assembly, use 5in. lb.
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 100mA, I
B
= 0
18
V
V
(BR)CES
I
C
= 20mA, V
BE
= 0
36
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 10mA, I
C
= 0
4
V
Collector Cutoff Current
I
CES
V
CE
= 15V, V
BE
= 0, T
C
= +55
C
10
mA
I
CBO
V
CB
= 15V, I
E
= 0
2.5
mA
ON Characteristics
DC Current Gain
h
FE
I
C
= 1A, V
CE
= 5V
5
Dynamic Characteristics
Output Capacitance
C
ob
V
CB
= 15V, I
E
= 0, f = 0.1MHz
170
200
pF
Function Test
CommonEmitter Amplifier Power Gain
G
PE
P
O
= 40W, V
CC
= 12.5V, f = 175MHz
4.5
dB
Collector Efficiency
P
O
= 40W, V
CC
= 12.5V, f = 175MHz
70
%
175MHz Test Circuit
SHIELD
DUT
100
F
0.1
F
1000pF
RFC
L1
C1
RF
Input
C2
RFC
100pF
100pF
L2
C4
C3
RF
Output
+12.5Vdc
+
C1, C2, C3, C4
5.0 80pF ARCO 462
L2
1 Turn, #14 AWG, 3/8" ID, Length Plus Leads = 1.000
L1
Straight Wire, #14 AWG, 13/8" Long
RFC
VK20020/4B, FERROXCUBE
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