NTE327
Silicon NPN Transistor
Power Amp, Switch
Description:
The NTE327 is a silicon NPN transistor in a TO3 type package designed for use in industrial amplifier
and switching circuit applications.
Features:
D
High CollectorEmitter Sustaining Voltage
D
High DC Current Gain
D
Low CollectorEmitter Saturation Voltage
D
Fast Switching Times
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
150V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CB
180V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EB
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
25A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
50A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
10A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
C), P
D
200W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
1.14W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, JunctiontoCase, R
thJC
0.875
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Sustaining Voltage
V
CEO(sus)
I
C
= 50mA, I
B
= 0, Note 1
150
V
Collector Cutoff Current
I
CEX
V
CE
= 150V, V
EB(off)
= 1.5V
10
mA
V
CE
= 150V, V
EB(off)
= 1.5V,
T
C
= +150
C
1.0
mA
I
CEO
V
CE
= 75V, I
B
= 0
50
A
I
CBO
V
CB
= 180V, I
E
= 0
50
A
Emitter Cutoff Current
I
EBO
V
BE
= 6V, I
C
= 0
100
A
Electrical Characteristics (Cont'd): (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics (Note 1)
DC Current Gain
h
FE
V
CE
= 2V, I
C
= 0.5A
50
V
CE
= 2V, I
C
= 10A
30
120
V
CE
= 2V, I
C
= 25A
12
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 10A, I
B
= 1.0A
1.0
V
I
C
= 25A, I
B
= 2.5A
1.8
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 10A, I
B
= 1.0A
1.8
V
I
C
= 25A, I
B
= 2.5A
2.5
V
BaseEmitter ON Voltage
V
BE(on)
I
C
= 10A, V
CE
= 2V
1.8
V
Dynamic Characteristics
Current GainBandwidth Product
f
T
V
CE
= 10V, I
C
= 1A, f = 10MHz,
Note 2
40
MHz
Output Capacitance
C
ob
V
CB
= 10V, I
E
= 0, f = 0.1MHz
300
pF
Switching Characteristics
Rise Time
t
r
V
CC
= 80V, I
C
= 10A, I
B1
= 1A,
V
BE(off)
= 6V
0.3
Storage Time
t
s
V
CC
= 80V, I
C
= 10A, I
B1
= I
B2
=1A
1.0
s
Fall Time
t
f
0.25
s
Note 1. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
Note 2. f
T
= |h
fe
|
f
test
.
1.187 (30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02)
.312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/Case
Base
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
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