NTE329
Silicon NPN Transistor
RF Power Amp, CB
Description:
The NTE329 is designed primarily for use in largesignal output amplifier stages. Intended for use
in CitizenBand communications equipment operating to 30MHz. High breakdown voltages allow a
high percentage of upmodulation in AM circuits.
Features:
D
Specified 12.5V, 28MHz Characteristic:
Power Output = 3.5W
Power Gain
= 10dB
Efficiency
= 70% Typical
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CBO
60V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
3V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
C, Note 1), P
D
5W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above 25
C
28.6mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. This device is designed for RF operation. The total device dissipation rating applies only
when the device is operated as an RF amplifier.
Electrical Characteristics: (T
A
= +25
C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 50mA, I
B
= 0
30
V
V
(BR)CES
I
C
= 200mA, V
BE
= 0
60
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 1mA, I
C
= 0
3
V
Collector Cutoff Current
I
CBO
V
CB
= 15V, I
E
= 0
0.01
mA
ON Characteristics
DC Current Gain
h
FE
V
CE
= 2V, I
C
= 400mA
10
Dynamic Characteristics
Output Capacitance
C
ob
V
CB
= 12.5V, I
E
= 0, f = 1MHz
35
70
pF
Electrical Characteristics (Cont'd): (T
A
= +25
C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Functional Test
CommonEmitter Amplifier Power Gain
G
PE
P
OUT
= 3.5W, V
CC
= 12.5V, f = 27MHz
10
dB
Collector Efficiency
P
OUT
= 3.5W, V
CC
= 12.5V, f = 27MHz,
Note 3
62.5
70.0
%
Percent UpModulation
f = 27MHz, Note 2
85
%
Parallel Equivalent Input Resistance
R
in
P
OUT
= 3.5W, V
CC
= 12.5V, f = 27MHz
21
Parallel Equivalent Input Capacitance
C
in
P
OUT
= 3.5W, V
CC
= 12.5V, f = 27MHz
900
pF
Parallel Equivalent Output Capaciatnce
C
out
P
OUT
= 3.5W, V
CC
= 12.5V, f = 27MHz
200
pF
Note 2.
= R
F
P
OUT
100
(V
CC
) (I
C
)
Note 3. Percentage UpModulation is measured by setting the Carrier Power (P
C
) to 3.5 Watts with
V
CC
= 12.5Vdc and noting the power input. The peak envelope power (PEP) is noted after
doubling the original power input to simulate driver modulation (at a 25% duty cycle for ther-
mal considerations) and raising the V
CC
to 25Vdc (to simulate the modulating voltage). Per-
centage UpModulation is then determined by the relation:
Percentage UpModulation = (PEP) 1/2
1
100
P
C
.260
(6.6)
Max
.500
(12.7)
Min
.370 (9.39) Dia Max
.355 (9.03) Dia Max
45
.031 (.793)
Emitter
Base
Collector/Case
.018 (0.45)
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