NTE331 (NPN) & NTE332 (PNP)
Silicon Complementary Transistors
Audio Power Amp, Switch
Description:
The NTE331 (NPN) and NTE332 (PNP) are silicon epitaxialbase complementary power transistors
in a TO220 plastic package intended for use in power linear and switching applications.
Absolute Maximum Ratings:
CollectorBase Voltage (I
E
= 0), V
CBO
100V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage (I
B
= 0), V
CEO
100V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage (I
C
= 0), V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Current, I
E
15A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
15A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
+25
C), P
D
90W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance JunctiontoCase, R
thJC
1.4
C/W Max
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
I
E
= 0, V
CB
= 100V
500
A
I
E
= 0, V
CB
= 100V, T
C
= +150
C
5
mA
Collector Cutoff Current
I
CEO
I
B
= 0, V
CE
= 50V
1
mA
Emitter Cutoff Current
I
EBO
I
C
= 0, V
EB
= 5V
1
mA
CollectorEmitter Sustaining
Voltage
V
CEO(sus)
I
B
= 0, I
C
= 100mA, Note 1
100
V
CollectorEmitter Saturation
V
CE(sat)
I
C
= 5A, I
B
= 0.5A, Note 1
1
V
Voltage
I
C
= 10A, I
B
= 2.5A, Note 1
3
V
Electrical Characteristics (Cont'd): (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 10A, I
B
= 2.5A, Note 1
2.5
V
BaseEmitter Voltage
V
BE
I
C
= 5A, V
CE
= 4V, Note 1
1.5
V
DC Current Gain
h
FE
I
C
= 0.5A, V
CE
= 4V, Note 1
40
250
I
C
= 5A, V
CE
= 4V, Note 1
15
150
I
C
= 10A, V
CE
= 4V, Note 1
5
Transistion Frequency
f
T
I
C
= 0.5A, V
CE
= 4V
3
MHz
Note 1. Pulsed; Pulse Duration = 300
s, Duty Cycle = 1.5%.
.420 (10.67)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.250 (6.35)
Max
.147 (3.75)
Dia Max
.070 (1.78) Max
.100 (2.54)
Base
Collector/Tab
Emitter
.110 (2.79)
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