NTE2633 (NPN) & NTE2634 (PNP)
Silicon Complementary Transistors
High Frequency Video Driver
Description:
The NTE2633 (NPN) and NTE2634 (PNP) are silicon complementary epitaxial transistor in a TO126
type package designed for use in the buffer stage of the driver for highresolution color graphics moni-
tors.
Features:
D
High Breakdown Voltage
D
Low Output Capacitance
Absolute Maximum Ratings:
CollectorBase Voltage, V
CBO
115V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
95V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage (R
BE
= 100
), V
CER
110V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
3V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Collector Current, I
C
300mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
S
+115
C, Note 1), P
tot
3W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoSoldering Point (T
S
+115
C, Note 1), R
thJS
20K/W
. . . . . . . . .
Note 1. T
S
is the temperature at the soldering point of the collector lead.
Electrical Characteristics: (T
J
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 0.1mA
115
V
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 10mA
95
V
V
(BR)CER
I
C
= 10mA, R
BE
= 100
110
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 0.1mA
3
V
Collector Cutoff Current
I
CES
I
B
= 0, V
CE
= 50V
100
A
I
CBO
I
E
= 0, V
CB
= 50V
20
A
DC Current Gain
h
FE
I
C
= 50mA, V
CE
= 10V, T
A
= +25
C
20
35
Transition Frequency
f
T
I
C
= 50mA, V
CE
= 10V, f = 100MHz,
T
A
= +25
C
0.8
1.2
GHz
CollectorBase Capacitance
C
cb
I
C
= 0, V
CB
= 10V, f = 1MHz, T
A
= +25
C
2.0
pF
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