NTE350
Silicon NPN Transistor
RF Power Amp, Driver
Description:
The NTE350 is a silicon NPN transistor in a T72H type package designed primarily for use in 12.5V
VHF largesignal power amplifier applications required in commercial and industrial equipment to
300MHz.
Features:
D
Specified 12.5V, 175MHz Characteristics:
Output Power = 15W
Minimum Gain = 6.3dB
Efficiency = 60%
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
18V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CES
36V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
4V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
2.5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (Note 1, T
C
= +25
C), P
D
31W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
177mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. This device is designed for RF operation. The total device dissipation rating applies only
when the device is operated as an RF amplifier.
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 20mA, I
B
= 0
18
V
V
(BR)CES
I
C
= 10mA, V
BE
= 0
36
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 1mA, I
C
= 0
4
V
Collector Cutoff Current
I
CBO
V
CB
= 15V, I
E
= 0
0.5
mA
I
CES
V
CE
= 15V, V
BE
= 0, T
C
= +55
C
8
mA
ON Characteristics
DC Current Gain
h
FE
I
C
= 500mA, V
CE
= 5V
5
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