NTE353
Silicon NPN Transistor
RF Power Output
P
O
= 4W @ 175MHz
Description:
The NTE353 is designed for 12.5 Volt VHF largesignal amplifier applications required in military and
industrial equipment operating to 250MHz.
Features:
D
Balanced Emitter Construction with Isothermal Resistor Design to Provide the Designer with
the Optimum in Transistor Ruggedness.
D
Low lead Inductance Stripline Packaging for Easier Design and Increased Broadband Capabilities
D
Flange Package for Easy Mounting and Better Thermal Conductivity to Heat Sink.
D
Exceptional Power Output Stability versus Temperature.
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
18V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CBO
36V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
4V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector CurrentContinuous, I
C
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
C, Note 1), P
D
8W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
45.7mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. This device is designed for RF operation. The total device dissipation rating applies only
when the device is operated as an RF amplifier.
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 10mA, I
B
= 0
18
V
V
(BR)CES
I
C
= 5mA, V
BE
= 0
36
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 1mA, I
C
= 0
4
V
Collector Cutoff Current
I
CBO
V
CB
= 15V, I
E
= 0
250
A
I
CES
V
CE
= 15V, V
BE
= 0, T
C
= +55
C
5
mA
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