NTE2305 (NPN) & NTE2306 (PNP)
Silicon Complementary Transistors
High Voltage Power Amplifier
Description:
The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type
package designed for use in high power audio amplifier applications and high voltage switching regu-
lator circuits.
Features:
D
High CollectorEmitter Sustaining Voltage: V
CEO(sus)
= 160V
D
High DC Current Gain: h
FE
= 35 Typ @ I
C
= 8A
D
Low CollectorEmitter Saturation Voltage: V
CE(sat)
= 2V Max @ I
C
= 8A
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
160V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CB
160V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EB
70V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
16A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
20A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Base Current, I
B
5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (T
C
= +25
C), P
D
125W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
1
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulse Test: Pulse Width
5ms, Duty Cycle
10%.
Electrical Charactertistics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Sustaining Voltage
V
CEO(sus)
I
C
= 200mA, I
B
= 0, Note 2
160
V
CollectorEmitter Cutoff Current
I
CEX
V
CE
= 160V, V
EB(off)
= 1.5V
0.1
mA
V
CE
= 160V, V
EB9off)
= 1.5V, T
C
= +150
C
5.0
mA
I
CEO
V
CE
= 80V, I
B
= 0
750
A
EmitterBase Cutoff Current
I
EBO
V
BE
= 7V, I
C
= 0
1.0
mA
CollectorBase Cutoff Current
I
CBO
V
CB
= 160V, I
E
= 0
750
A
Note 2. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
Electrical Charactertistics (Cont'd): (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics (Note 2)
DC Current Gain
h
FE
V
CE
= 2V, I
C
= 8A
15
35
V
CE
= 4V, I
C
= 16A
8
15
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 8A, I
B
= 0.8A
2.0
V
I
C
= 16A, I
B
= 2A
3.5
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 16A, I
B
= 2A
3.9
V
BaseEmitter ON Voltage
V
BE(on)
V
CE
= 4V, I
C
= 16A
3.9
V
Dynamic Characteristics
CurrentGain Bandwidth Product
f
T
V
CE
= 20V, I
C
= 1A, f = 0.5MHz,
Note 3
1.0
MHz
Output Capacitance
C
ob
V
CB
= 10V, I
E
= 0, f = 0.1MHz
800
pF
Note 2. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
Note 3. f
T
= |h
FE
|
S
f
test
.
NOTE: Dotted line indicates that
case may have square corners
B
C
E
C
.156
(3.96)
Dia.
.600
(15.24)
.550
(13.97)
.430
(10.92)
.500
(12.7)
Min
.216 (5.45)
.055 (1.4)
.015 (0.39)
.173 (4.4)
.060 (1.52)
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