NTE361
Silicon NPN Transistor
RF Power Output
P
O
= 2W @ 512MHz
Description:
The NTE361 is a silicon NPN transistor designed for 12.5 Volt UHF largesignal amplifier applications
in industrial and commercial FM equipment operating to 512MHz.
Features:
D
Specified 12.5 Volt, 470MHz Characteristics:
Output Power = 2.0 Watts
Minimum Gain = 8.0dB
Efficiency = 50%
D
Characterized with Series Equivalent LargeSignal Impedance Parameters
D
Grounded Emitter TO39 Package for High Gain and Excellent Heat Dissipation
D
Replaces MediumPower Stud Mounted Devices
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
16V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CBO
36V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
4V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector CurrentContinuous, I
C
400mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation @ T
C
= 25
C, P
D
8W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
46mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 50mA, I
B
= 0
16
V
V
(BR)CES
I
C
= 50mA, V
BE
= 0
36
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 1mA, I
C
= 0
4
V
Collector Cutoff Current
I
CBO
V
CB
= 15V, I
E
= 0
1.0
mA
PDF 
ZIP