NTE376
Silicon NPN Transistor
TV Power Supply Driver/Audio Output
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
300V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
300V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
200mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, P
C
15W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
j
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
45
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 100
A, I
E
= 0
300
V
CollectorEmitter Breakdown Voltage V
(BR)CEO
I
C
= 5mA, R
BE
=
300
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 100
A, I
C
= 0
5
V
CollectorBase Current
I
CBO
V
CB
= 250V, I
E
= 0
0.1
A
CollectorEmitter Current
I
CEO
V
CE
= 250V, R
BE
=
2
A
DC Current Gain
h
FE
V
CE
= 10V, I
C
= 50mA
40
200
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 100mA, I
B
= 10mA
0.32
1.5
V
BaseEmitter Voltage
V
BE
V
CE
= 10V, I
C
= 50mA
0.66
0.9
V
Current GainBandwidth Product
f
T
V
CE
= 20V, I
C
= 30mA
60
70
MHz
CollectorBase Capacitance
C
ob
V
CB
= 50V, I
E
= 0, f = 1MHz
6.2
8
pF
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