ChipFind - документация

Электронный компонент: NTE378

Скачать:  PDF   ZIP
NTE377 (NPN) & NTE378 (PNP)
Silicon Complementary Transistors
Power Amp Driver, Output, Switch
Description:
The NTE377 (NPN) and NTE378 (PNP) are silicon complementary transistors in a TO220 type pack-
age designed for general purpose power amplification and switching such as output or driver stages
in applications such as switching regulators, converters, and power amplifiers.
Features:
D
Low CollectorEmitter Saturation Voltage: V
CE(sat)
= 1V Max @ 8A
D
Fast Switching Speeds
D
Complementary Pairs Simplifies Designs
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EB
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
10A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
20A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation, P
D
T
C
= +25
C
50W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
A
= +25
C
1.67W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
JC
2.5
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient, R
JA
75
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Lead Temperature (During Soldering, 1/8" from case, 5sec), T
L
+275
C
. . . . . . . . . . . . . .
Note 1. Pulse Width
6ms, Duty Cycle
50%.
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector Cutoff Current
I
CES
V
CE
= 80V, V
BE
= 0
10
A
Emitter Cutoff Current
I
EBO
V
EB
= 5V
100
A
ON Characteristics
DC Current Gain
h
FE
V
CE
= 1V, I
C
= 2A, T
J
= +25
C
60
V
CE
= 1V, I
C
= 4A, T
J
= +25
C
40
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 8A, I
B
= 400mA
1.0
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 8A, I
b
= 800mA
1.5
V
Dynamic Characteristics
Collector Capacitance
NTE377
C
cb
V
CB
= 10V, f
test
= 1MHz
130
pF
NTE378
230
pF
Gain Bandwidth Product
NTE377
f
T
I
C
= 500mA, V
CE
= 10V, f = 20MHz
50
MHz
NTE378
40
MHz
Switching Times
Delay and Rise Time
NTE377
t
d
+ t
r
I
C
= 5A, I
B1
= 500mA
300
ns
NTE378
135
ns
Storage Time
t
s
I
C
= 5A, I
B1
= I
B2
= 500mA
500
ns
Fall Time
NTE377
t
f
140
ns
NTE378
100
ns
.250
(6.35)
Max
.500 (12.7)
Max
.500 (12.7)
Min
.110 (2.79)
.420 (10.67)
Max
.070 (1.78) Max
Base
.100 (2.54)
Collector/Tab
Emitter
.147 (3.75)
Dia Max