NTE389
Silicon NPN Transistor
Horizontal Output
Description:
The NTE389 is a high voltage silicon NPN power transistor in a TO3 type case designed for use in
CRT horizontal deflection circuits.
Features:
D
CollectorEmitter Voltage: V
CEX
= 1500V
D
Glass Passivated BaseCollector Junction
D
Forward Bias Safe Operating Area @ 50
s = 20A, 300V
D
Switching Times with Inductive Loads: t
f
= 0.5
s (Typ) @ I
C
= 3A
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
750V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEX
1500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
4A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Base Current, I
B
3A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continouos Emitter Current, I
E
7A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation, P
D
T
C
= +25
C
100W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +100
C
40W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above +25
C
0.8W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
1.25
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Lead Temperature (For Soldering, 1/8" from Case for 5sec), T
L
+275
C
. . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ
Max Unit
OFF Characteristics (Note 1)
CollectorEmitter Sustaining Voltage V
CEO(sus)
I
C
= 50mA, I
B
= 0
750
V
Collector Cutoff Current
I
CES
V
CE
= 1500V, V
BE
= 0
1.0
mA
Emitter Cutoff Current
I
EBO
V
BE
= 5V, I
C
= 0
1.0
mA
ON Characteristics (Note 1)
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 3A, I
B
= 1.2A
5.0
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 3A, I
B
= 1.2A
1.5
V
Dynamic Characteristics
Current Gain Bandwidth Product
f
T
I
C
= 0.1A, V
CE
= 5V, f
test
= 1MHz
4
MHz
Output Capacitance
C
ob
V
CB
= 10V, I
E
= 0, f = 0.1MHz
90
pF
Switching Characteristics
Fall Time
t
f
I
C
= 3A, I
B1
= 1.2A, L
B
= 8
H
0.5
1.0
s
Note 1. Pulse Test: Pulse Width
300
s, Duty Cycle = 2%.
1.187 (30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02)
.312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/Case
Base
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
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