NTE395
Silicon PNP Transistor
Wide Band Linear Amplifier
Absolute Maximum Ratings:
CollectorBase Voltage, V
CBO
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
25V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
3V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
50mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (T
A
= +25
C), P
tot
225mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (T
C
= +25
C), P
tot
360mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
485
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient, R
thJA
775
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
CollectorBase Cutoff Current
I
CBO
V
CB
= 15V, I
E
= 0
50
nA
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 100
A, I
E
= 0
30
V
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 5mA, I
B
= 0
25
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 10
A, I
C
= 0
3
V
Static Forward Current Transfer Ratio
h
21E
V
CE
= 10V, I
C
= 10mA, Note 1
20
BaseEmitter Voltage
V
BE
V
CE
= 10V, I
C
= 10mA
0.75
V
Knee Voltage
V
CEK
I
C
= 20mA, Note 2
0.8
V
Transition Frequency
f
T
V
CE
= 15V, I
C
= 10mA
1.4
2.3
GHz
Maximum Oscillation Frequency
f
V
CE
= 15V, I
C
= 10mA
6.5
GHz
Output Capacitance
C
22b
V
CB
= 15V, I
E
= 0, f = 1MHz
1.1
pF
Note 1. Pulsed.
Note 2. V
CEK
tested with I
C
= 100ma and I
B
= values for which I
C
= 110mA at V
CE
= 1V.
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