NTE397
Silicon PNP Transistor
Power Amplifier & High Speed Switch
(Compl to NTE396)
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
300V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CBO
350V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
C), P
D
10W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
57mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
17.5
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient, R
thJA
150
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
CollectorEmitter Sustaining Voltage V
CEO(sus)
I
C
= 50mA, I
B
= 0, Note 1
300
V
Collector Cutoff Current
I
CBO
V
CB
= 280V, I
E
= 0
50
A
Emitter Cutoff Current
I
EBO
V
EB
= 6V, I
C
= 0
20
A
ON Characteristics
DC Current Gain
h
FE
I
C
= 50mA, V
CE
= 10V
30
120
SmallSignal Characteristics
Output Capacitance
C
obo
V
CB
= 10V, I
E
= 0, f = 1MHz
15
pF
Input Capacitance
C
ibo
V
CB
= 5V, I
C
= 0, f = 1MHz
75
pF
SmallSignal Current Gain
h
fe
I
C
= 10mA, V
CE
= 10V, f = 1MHz
25
Real Part of Input Impedance
Re(h
ie
)
V
CE
= 10V, I
C
= 5mA, f = 1MHz
300
Note 1. Pulse Test; Pulse Width
300
s, Duty Cycle
2%.
CAUTION: The sustaining voltage must not be measured on a curve tracer.
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