NTE399
Silicon NPN Transistor
High Voltage Video Amp
(Compl to NTE2366)
Absolute Maximum Ratings:
CollectorBase Voltage, V
CBO
300V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
300V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
100mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
300mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
900mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 200V, I
E
= 0
1.0
A
Emitter Cutoff Current
I
EBO
V
EB
= 6V, I
C
= 0
1.0
A
DC Current Gain
h
FE
V
CE
= 10V, I
C
= 5mA
100
220
Current GainBandwidth Product
f
T
V
CB
= 30V, I
C
= 10mA
50
MHz
Output Capacitance
C
ob
V
CB
= 10V, f = 1MHz
7.5
pF
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 20mA, I
B
= 2mA
0.6
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 20mA, I
B
= 2mA
1.0
V
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